Suppression of boron diffusion using carbon co-implantation in DRAM

Suk Hun Lee; Se Geun Park; Shin Deuk Kim; Hyuck Chai Jung; Il Gweon Kim; Dong Ho Kang; Dae Jung Kim; Kyu Pil Lee; Joo Sun Choi; Jung Woo Baek; Moonsuk Choi; Yongkook Park; Changhwan Choi; Jin Hong Park

doi:10.1016/j.materresbull.2016.03.011

Suppression of boron diffusion using carbon co-implantation in DRAM

Suk Hun Lee
, Se Geun Park
, Shin Deuk Kim
, Hyuck Chai Jung
, Il Gweon Kim
, Dong Ho Kang
, Dae Jung Kim
, Kyu Pil Lee
, Joo Sun Choi
, Jung Woo Baek
, Moonsuk Choi
, Yongkook Park
, Changhwan Choi
, Jin Hong Park

Department of Industrial and Systems Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (V_TH) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the V_TH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.

Original language	English
Pages (from-to)	22-25
Number of pages	4
Journal	Materials Research Bulletin
Volume	82
DOIs	https://doi.org/10.1016/j.materresbull.2016.03.011
State	Published - 1 Oct 2016

Keywords

A. Electronic materials
A. Semiconductor
D. Defect
D. Diffusion
D. Electrical properties

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10.1016/j.materresbull.2016.03.011

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title = "Suppression of boron diffusion using carbon co-implantation in DRAM",

abstract = "In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15\% and the write characteristics were improved two-fold.",

keywords = "A. Electronic materials, A. Semiconductor, D. Defect, D. Diffusion, D. Electrical properties",

author = "Lee, \{Suk Hun\} and Park, \{Se Geun\} and Kim, \{Shin Deuk\} and Jung, \{Hyuck Chai\} and Kim, \{Il Gweon\} and Kang, \{Dong Ho\} and Kim, \{Dae Jung\} and Lee, \{Kyu Pil\} and Choi, \{Joo Sun\} and Baek, \{Jung Woo\} and Moonsuk Choi and Yongkook Park and Changhwan Choi and Park, \{Jin Hong\}",

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doi = "10.1016/j.materresbull.2016.03.011",

language = "English",

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journal = "Materials Research Bulletin",

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T1 - Suppression of boron diffusion using carbon co-implantation in DRAM

AU - Lee, Suk Hun

AU - Park, Se Geun

AU - Kim, Shin Deuk

AU - Jung, Hyuck Chai

AU - Kim, Il Gweon

AU - Kang, Dong Ho

AU - Kim, Dae Jung

AU - Lee, Kyu Pil

AU - Choi, Joo Sun

AU - Baek, Jung Woo

AU - Choi, Moonsuk

AU - Park, Yongkook

AU - Choi, Changhwan

AU - Park, Jin Hong

PY - 2016/10/1

Y1 - 2016/10/1

N2 - In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.

AB - In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.

KW - A. Electronic materials

KW - A. Semiconductor

KW - D. Defect

KW - D. Diffusion

KW - D. Electrical properties

UR - https://www.scopus.com/pages/publications/84961226861

U2 - 10.1016/j.materresbull.2016.03.011

DO - 10.1016/j.materresbull.2016.03.011

M3 - Article

AN - SCOPUS:84961226861

SN - 0025-5408

VL - 82

SP - 22

EP - 25

JO - Materials Research Bulletin

JF - Materials Research Bulletin

ER -

Suppression of boron diffusion using carbon co-implantation in DRAM

Abstract

Keywords

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