Surface induced charge transfer in Cu_xIn_2-xS₃ nanostructures and their enhanced photoelectronic and photocatalytic performance

Multi-functional semiconducting nanostructures are gaining popularity for application in photoelectronics, energy storage devices and also in industrial and environmental remediation functions. In this regard, Cu_xIn_2-xS₃ nanostructures were investigated in detail for their photoelectrical and photocatalytic performance. Their physico-chemical characteristics were at first studied using X-ray diffraction, Raman, UV–vis absorbance, X-ray photoelectron spectroscopy and high resolution electron microscopic tools. Cu_xIn_2-xS₃ based flip chip Schottky diodes were demonstrated to attest their improved conductivity and enhanced photoelectrical performance. The photo switching capabilities of a type II p-n CdTe/Cu_xIn_2-xS₃ heterojunction was also investigated. In both the device configurations, the current-voltage (I-V) characteristics revealed the forward current and rectification ratio to improve under lower threshold voltages. The time-dependent photoresponse characteristics affirmed the stability of diodes, augmenting the improved/effective separation of photo generated electron hole pairs under illumination. Additionally, the photocatalytic performances of Cu_xIn_2-xS₃ nanostructures were inferred under visible light conditions through effective remediation of methylene blue (MB) dye molecules. The obtained results infer the Cu interaction in tetragonal lattice of Cu_xIn_2-xS₃ to promote the surface induced charge transfer mechanism in respective nanostructures, thereby enhancing their photoelectronic and photocatalytic functionalities.