Surface passivation of GaAs substrates with SiO2 deposited using ALD

G. K. Dalapati; C. K. Chia; C. Mahata; T. Das; C. K. Maiti; M. K. Kumar; H. Gao; S. Y. Chiam; C. C. Tan; C. T. Chua; Y. B. Cheng; D. Z. Chi

doi:10.1149/1.3615963

Surface passivation of GaAs substrates with SiO₂ deposited using ALD

G. K. Dalapati
, C. K. Chia
, C. Mahata
, T. Das
, C. K. Maiti
, M. K. Kumar
, H. Gao
, S. Y. Chiam
, C. C. Tan
, C. T. Chua
, Y. B. Cheng
, D. Z. Chi

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Feasibility of using atomic layer deposited (ALD) silicon dioxide (SiO ₂) as interface passivation layer in bulk-GaAs and epitaxial-GaAs (epi-GaAs) substrate is studied. The interfacial reaction mechanisms of ALD SiO₂ on bulk-GaAs and epi-GaAs are studied using x-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), and electrical measurements. Higher oxidation states of Ga (Ga²⁺, Ga³⁺) and As-O bonding are found to get effectively suppressed in ALD SiO₂/GaAs structures after post deposition annealing. Capacitance-voltage characteristics of the TaN/ALD SiO₂/p-GaAs gate stack show low hysteresis (∼ 30 mV) compared to ALD HfO₂ on bulk p-GaAs.

Original language	English
Pages (from-to)	G52-G55
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	10
DOIs	https://doi.org/10.1149/1.3615963
State	Published - 2011

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@article{7b306ed748b44fe5a07755795822a187,

title = "Surface passivation of GaAs substrates with SiO2 deposited using ALD",

abstract = "Feasibility of using atomic layer deposited (ALD) silicon dioxide (SiO 2) as interface passivation layer in bulk-GaAs and epitaxial-GaAs (epi-GaAs) substrate is studied. The interfacial reaction mechanisms of ALD SiO2 on bulk-GaAs and epi-GaAs are studied using x-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), and electrical measurements. Higher oxidation states of Ga (Ga2+, Ga3+) and As-O bonding are found to get effectively suppressed in ALD SiO2/GaAs structures after post deposition annealing. Capacitance-voltage characteristics of the TaN/ALD SiO2/p-GaAs gate stack show low hysteresis (∼ 30 mV) compared to ALD HfO2 on bulk p-GaAs.",

author = "Dalapati, \{G. K.\} and Chia, \{C. K.\} and C. Mahata and T. Das and Maiti, \{C. K.\} and Kumar, \{M. K.\} and H. Gao and Chiam, \{S. Y.\} and Tan, \{C. C.\} and Chua, \{C. T.\} and Cheng, \{Y. B.\} and Chi, \{D. Z.\}",

year = "2011",

doi = "10.1149/1.3615963",

language = "English",

volume = "14",

pages = "G52--G55",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "10",

}

TY - JOUR

T1 - Surface passivation of GaAs substrates with SiO2 deposited using ALD

AU - Dalapati, G. K.

AU - Chia, C. K.

AU - Mahata, C.

AU - Das, T.

AU - Maiti, C. K.

AU - Kumar, M. K.

AU - Gao, H.

AU - Chiam, S. Y.

AU - Tan, C. C.

AU - Chua, C. T.

AU - Cheng, Y. B.

AU - Chi, D. Z.

PY - 2011

Y1 - 2011

N2 - Feasibility of using atomic layer deposited (ALD) silicon dioxide (SiO 2) as interface passivation layer in bulk-GaAs and epitaxial-GaAs (epi-GaAs) substrate is studied. The interfacial reaction mechanisms of ALD SiO2 on bulk-GaAs and epi-GaAs are studied using x-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), and electrical measurements. Higher oxidation states of Ga (Ga2+, Ga3+) and As-O bonding are found to get effectively suppressed in ALD SiO2/GaAs structures after post deposition annealing. Capacitance-voltage characteristics of the TaN/ALD SiO2/p-GaAs gate stack show low hysteresis (∼ 30 mV) compared to ALD HfO2 on bulk p-GaAs.

AB - Feasibility of using atomic layer deposited (ALD) silicon dioxide (SiO 2) as interface passivation layer in bulk-GaAs and epitaxial-GaAs (epi-GaAs) substrate is studied. The interfacial reaction mechanisms of ALD SiO2 on bulk-GaAs and epi-GaAs are studied using x-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), and electrical measurements. Higher oxidation states of Ga (Ga2+, Ga3+) and As-O bonding are found to get effectively suppressed in ALD SiO2/GaAs structures after post deposition annealing. Capacitance-voltage characteristics of the TaN/ALD SiO2/p-GaAs gate stack show low hysteresis (∼ 30 mV) compared to ALD HfO2 on bulk p-GaAs.

UR - https://www.scopus.com/pages/publications/80051632170

U2 - 10.1149/1.3615963

DO - 10.1149/1.3615963

M3 - Article

AN - SCOPUS:80051632170

SN - 1099-0062

VL - 14

SP - G52-G55

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

Surface passivation of GaAs substrates with SiO₂ deposited using ALD

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