Surface passivation of Hg0.8Cd0.2Te grown by MBE

H. C. Jeon; J. H. Leem; Y. S. Ryu; C. K. Kang; N. H. Kim; T. W. Kang; H. J. Kim; D. Y. Kim; M. S. Han

Surface passivation of Hg_0.8Cd_0.2Te grown by MBE

H. C. Jeon, J. H. Leem, Y. S. Ryu, C. K. Kang, N. H. Kim, T. W. Kang, H. J. Kim, D. Y. Kim, M. S. Han

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have investigated on the surface passivation of HgCdTe with various surface treatment method; chemical oxidation, photochemical oxidation, and sulfur treatment. The density of fast state, slow state and fixed charge are analyzed by C-V method. We confirm that the sulfur treatment is the best surface passivation condition showing low density of the fast states and the fixed charge.

Original language	English
Pages (from-to)	357-360
Number of pages	4
Journal	Opto-Electronics Review
Volume	7
Issue number	4
State	Published - 1999

Keywords

HgCdTe MIS structure
MBE growth
Passivation

Cite this

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title = "Surface passivation of Hg0.8Cd0.2Te grown by MBE",

abstract = "We have investigated on the surface passivation of HgCdTe with various surface treatment method; chemical oxidation, photochemical oxidation, and sulfur treatment. The density of fast state, slow state and fixed charge are analyzed by C-V method. We confirm that the sulfur treatment is the best surface passivation condition showing low density of the fast states and the fixed charge.",

keywords = "HgCdTe MIS structure, MBE growth, Passivation",

author = "Jeon, {H. C.} and Leem, {J. H.} and Ryu, {Y. S.} and Kang, {C. K.} and Kim, {N. H.} and Kang, {T. W.} and Kim, {H. J.} and Kim, {D. Y.} and Han, {M. S.}",

year = "1999",

language = "English",

volume = "7",

pages = "357--360",

journal = "Opto-Electronics Review",

issn = "1230-3402",

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number = "4",

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TY - JOUR

T1 - Surface passivation of Hg0.8Cd0.2Te grown by MBE

AU - Jeon, H. C.

AU - Leem, J. H.

AU - Ryu, Y. S.

AU - Kang, C. K.

AU - Kim, N. H.

AU - Kang, T. W.

AU - Kim, H. J.

AU - Kim, D. Y.

AU - Han, M. S.

PY - 1999

Y1 - 1999

N2 - We have investigated on the surface passivation of HgCdTe with various surface treatment method; chemical oxidation, photochemical oxidation, and sulfur treatment. The density of fast state, slow state and fixed charge are analyzed by C-V method. We confirm that the sulfur treatment is the best surface passivation condition showing low density of the fast states and the fixed charge.

AB - We have investigated on the surface passivation of HgCdTe with various surface treatment method; chemical oxidation, photochemical oxidation, and sulfur treatment. The density of fast state, slow state and fixed charge are analyzed by C-V method. We confirm that the sulfur treatment is the best surface passivation condition showing low density of the fast states and the fixed charge.

KW - HgCdTe MIS structure

KW - MBE growth

KW - Passivation

UR - http://www.scopus.com/inward/record.url?scp=0348224067&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0348224067

SN - 1230-3402

VL - 7

SP - 357

EP - 360

JO - Opto-Electronics Review

JF - Opto-Electronics Review

IS - 4

ER -

Surface passivation of Hg_0.8Cd_0.2Te grown by MBE

Abstract

Keywords

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