Surface passivation of Hg0.8Cd0.2Te grown by MBE

H. C. Jeon; J. H. Leem; Y. S. Ryu; C. K. Kang; N. H. Kim; T. W. Kang; H. J. Kim; D. Y. Kim; M. S. Han

Surface passivation of Hg_0.8Cd_0.2Te grown by MBE

H. C. Jeon
, J. H. Leem
, Y. S. Ryu
, C. K. Kang
, N. H. Kim
, T. W. Kang
, H. J. Kim
, D. Y. Kim
, M. S. Han

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have investigated on the surface passivation of HgCdTe with various surface treatment method; chemical oxidation, photochemical oxidation, and sulfur treatment. The density of fast state, slow state and fixed charge are analyzed by C-V method. We confirm that the sulfur treatment is the best surface passivation condition showing low density of the fast states and the fixed charge.

Original language	English
Pages (from-to)	357-360
Number of pages	4
Journal	Opto-Electronics Review
Volume	7
Issue number	4
State	Published - 1999

Keywords

HgCdTe MIS structure
MBE growth
Passivation

Cite this

@article{d108fd5e6cc747b5ae525938498e1ae9,

title = "Surface passivation of Hg0.8Cd0.2Te grown by MBE",

abstract = "We have investigated on the surface passivation of HgCdTe with various surface treatment method; chemical oxidation, photochemical oxidation, and sulfur treatment. The density of fast state, slow state and fixed charge are analyzed by C-V method. We confirm that the sulfur treatment is the best surface passivation condition showing low density of the fast states and the fixed charge.",

keywords = "HgCdTe MIS structure, MBE growth, Passivation",

author = "Jeon, \{H. C.\} and Leem, \{J. H.\} and Ryu, \{Y. S.\} and Kang, \{C. K.\} and Kim, \{N. H.\} and Kang, \{T. W.\} and Kim, \{H. J.\} and Kim, \{D. Y.\} and Han, \{M. S.\}",

year = "1999",

language = "English",

volume = "7",

pages = "357--360",

journal = "Opto-Electronics Review",

issn = "1230-3402",

publisher = "Polska Akademia Nauk",

number = "4",

}

TY - JOUR

T1 - Surface passivation of Hg0.8Cd0.2Te grown by MBE

AU - Jeon, H. C.

AU - Leem, J. H.

AU - Ryu, Y. S.

AU - Kang, C. K.

AU - Kim, N. H.

AU - Kang, T. W.

AU - Kim, H. J.

AU - Kim, D. Y.

AU - Han, M. S.

PY - 1999

Y1 - 1999

N2 - We have investigated on the surface passivation of HgCdTe with various surface treatment method; chemical oxidation, photochemical oxidation, and sulfur treatment. The density of fast state, slow state and fixed charge are analyzed by C-V method. We confirm that the sulfur treatment is the best surface passivation condition showing low density of the fast states and the fixed charge.

AB - We have investigated on the surface passivation of HgCdTe with various surface treatment method; chemical oxidation, photochemical oxidation, and sulfur treatment. The density of fast state, slow state and fixed charge are analyzed by C-V method. We confirm that the sulfur treatment is the best surface passivation condition showing low density of the fast states and the fixed charge.

KW - HgCdTe MIS structure

KW - MBE growth

KW - Passivation

UR - https://www.scopus.com/pages/publications/0348224067

M3 - Article

AN - SCOPUS:0348224067

SN - 1230-3402

VL - 7

SP - 357

EP - 360

JO - Opto-Electronics Review

JF - Opto-Electronics Review

IS - 4

ER -

Surface passivation of Hg_0.8Cd_0.2Te grown by MBE

Abstract

Keywords

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