Abstract
Precise modulation of electrical and optical properties of 2D transition metal dichalcogenides (TMDs) is required for their application to high-performance devices. Although conventional plasma-based doping methods have provided excellent controllability and reproducibility for bulk or relatively thick TMDs, the application of plasma doping for ultrathin few-layer TMDs has been hindered by serious degradation of their properties. Herein, a reliable and universal doping route is reported for few-layer TMDs by employing surface-shielding nanostructures during a plasma-doping process. It is shown that the surface-protection oxidized polydimethylsiloxane nanostructures obtained from the sub-20 nm self-assembly of Si-containing block copolymers can preserve the integrity of 2D TMDs and maintain high mobility while affording extensive control over the doping level. For example, the self-assembled nanostructures form periodically arranged plasma-blocking and plasma-accepting nanoscale regions for realizing modulated plasma doping on few-layer MoS2, controlling the n-doping level of few-layer MoS2 from 1.9 × 1011 cm−2 to 8.1 × 1011 cm−2 via the local generation of extra sulfur vacancies without compromising the carrier mobility.
Original language | English |
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Pages (from-to) | 5631-5640 |
Number of pages | 10 |
Journal | Advanced Functional Materials |
Volume | 26 |
Issue number | 31 |
DOIs | |
State | Published - 16 Aug 2016 |
Keywords
- block copolymer
- molybdenum disulfide
- plasma doping
- self-assembly
- transition metal dichalcogenide