Surface states passivation for and regrowth around nanoposts formed for the fabrication of InP-based intersubband quantum box lasers

M. K. Rathi, G. Tsvid, J. C. Shin, A. A. Khandekar, D. Botez, T. F. Kuech

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Passivation of interfaces corresponding to the nanoposts' sidewalls in InP-based intersubband quantum-box (IQB) lasers has resulted in interfacial-state densities < 1011/cm2. High-quality regrowths of semi-insulating InP around dry-etched, passivated, 40nm-diameter nanoposts were realized.

Original languageEnglish
Title of host publicationIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Pages83-86
Number of pages4
DOIs
StatePublished - 2009
EventIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
Duration: 10 May 200914 May 2009

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

ConferenceIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Country/TerritoryUnited States
CityNewport Beach, CA
Period10/05/0914/05/09

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