@inproceedings{2edcd1fb417949ba9f6c6db23566dc93,
title = "Switching and conduction mechanism of Cu/Si3N4/Si RRAM with CMOS compatibility",
abstract = "In this work, we fabricated CMOS compatible Cu/Si3N4/Si RRAM, showing good resistive switching. This memory cell is stable for bipolar switching (BS) than unipolar switching (US). Trap-controlled space charge limited current (SCLC) conduction is observed. Low resistance state (LRS) shows semiconducting behavior according to the temperature dependency.",
author = "Sungjun Kim and Sunghun Jung and Kim, {Min Hwi} and Seongjae Cho and Lee, {Jong Ho} and Park, {Byung Gook}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; Silicon Nanoelectronics Workshop, SNW 2014 ; Conference date: 08-06-2014 Through 09-06-2014",
year = "2015",
month = dec,
day = "4",
doi = "10.1109/SNW.2014.7348603",
language = "English",
series = "2014 Silicon Nanoelectronics Workshop, SNW 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 Silicon Nanoelectronics Workshop, SNW 2014",
address = "United States",
}