@inproceedings{00f988f5239b4727a3d8c64b7965b7c9,
title = "Switching from classical to ballistic transport in a 100-nm Γ-gate AlGaAs/InGaAs pseudomorphic HEMT at low temperatures",
abstract = "We have investigated the temperature dependence of the drain current in a 100 nm-gate AlGaAs/InGaAs pseudomorphic HEMT (pHEMT). It is clearly demonstrated that the ballistic component in the drain current characteristics is enhanced by both lowering temperature and increasing drain voltage. Modeled results for the transmission coefficient (t) confirm our analysis of the experimental observation.",
keywords = "Backscattering, Ballistic transport, Pseudomorphic high-electron-mobility transistor (pHEMT)",
author = "Nambin Kim and Yongmin Kim and Woong Jung and Hyunsik Im and Hyungsang Kim and Sungchan Kim and Donghoon Shin",
year = "2007",
doi = "10.1063/1.2730033",
language = "English",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "597--598",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}