Switching Power Universality in Unipolar Resistive Switching Memories

Jongmin Kim; Kyooho Jung; Yongmin Kim; Yongcheol Jo; Sangeun Cho; Hyeonseok Woo; Seongwoo Lee; A. I. Inamdar; Jinpyo Hong; Jeon Kook Lee; Hyungsang Kim; Hyunsik Im

doi:10.1038/srep23930

Switching Power Universality in Unipolar Resistive Switching Memories

Jongmin Kim, Kyooho Jung, Yongmin Kim, Yongcheol Jo, Sangeun Cho, Hyeonseok Woo, Seongwoo Lee, A. I. Inamdar, Jinpyo Hong, Jeon Kook Lee, Hyungsang Kim, Hyunsik Im

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltage and current are performed, and neither of these correlate with one another. As the switching resistance (R) increases, the switching power (P) decreases following a power law P ∝ R^-β, regardless of the device configurations. The observed switching power universality is indicative of the existence of a commonly applicable switching mechanism. The origin of the power universality is discussed based on a metallic filament model and thermo-chemical reaction.

Original language	English
Article number	23930
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep23930
State	Published - 1 Apr 2016

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title = "Switching Power Universality in Unipolar Resistive Switching Memories",

abstract = "We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltage and current are performed, and neither of these correlate with one another. As the switching resistance (R) increases, the switching power (P) decreases following a power law P ∝ R-β, regardless of the device configurations. The observed switching power universality is indicative of the existence of a commonly applicable switching mechanism. The origin of the power universality is discussed based on a metallic filament model and thermo-chemical reaction.",

author = "Jongmin Kim and Kyooho Jung and Yongmin Kim and Yongcheol Jo and Sangeun Cho and Hyeonseok Woo and Seongwoo Lee and Inamdar, {A. I.} and Jinpyo Hong and Lee, {Jeon Kook} and Hyungsang Kim and Hyunsik Im",

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T1 - Switching Power Universality in Unipolar Resistive Switching Memories

AU - Kim, Jongmin

AU - Jung, Kyooho

AU - Kim, Yongmin

AU - Jo, Yongcheol

AU - Cho, Sangeun

AU - Woo, Hyeonseok

AU - Lee, Seongwoo

AU - Inamdar, A. I.

AU - Hong, Jinpyo

AU - Lee, Jeon Kook

AU - Kim, Hyungsang

AU - Im, Hyunsik

PY - 2016/4/1

Y1 - 2016/4/1

N2 - We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltage and current are performed, and neither of these correlate with one another. As the switching resistance (R) increases, the switching power (P) decreases following a power law P ∝ R-β, regardless of the device configurations. The observed switching power universality is indicative of the existence of a commonly applicable switching mechanism. The origin of the power universality is discussed based on a metallic filament model and thermo-chemical reaction.

AB - We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltage and current are performed, and neither of these correlate with one another. As the switching resistance (R) increases, the switching power (P) decreases following a power law P ∝ R-β, regardless of the device configurations. The observed switching power universality is indicative of the existence of a commonly applicable switching mechanism. The origin of the power universality is discussed based on a metallic filament model and thermo-chemical reaction.

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ER -

Switching Power Universality in Unipolar Resistive Switching Memories

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