Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering

Sajjad Hussain, Muhammad Arslan Shehzad, Dhanasekaran Vikraman, Muhammad Farooq Khan, Jai Singh, Dong Chul Choi, Yongho Seo, Jonghwa Eom, Wan Gyu Lee, Jongwan Jung

Research output: Contribution to journalArticlepeer-review

83 Scopus citations

Abstract

In this article, we report layer-controlled, continuous and large-area molydenum sulfide (MoS2) growth onto a SiO2/Si substrate by RF sputtering combined with sulfurization. A two-step process was employed to synthesize MoS2 films. In the first step, an atomically thin MoO3 film was deposited by RF magnetron sputtering at 300 °C. Subsequently, the as-sputtered MoO3 film was further subjected to post-annealing and sulfurization processes at 650 °C for 1 hour. It was observed that the number of layers of MoS2 can be controlled by adjusting the sputtering time. The fabricated MoS2 transistors exhibited high mobility values of ∼21 cm2 V-1 s-1 (bilayer) and ∼25 cm2 V-1 s-1 (trilayer), on/off ratios in the range of ∼107 (bilayer) and 104-105 (trilayer), respectively. We believe that our proposed paradigm can start a new method for the growth of MoS2 in future electronics and optoelectronics applications.

Original languageEnglish
Pages (from-to)4340-4347
Number of pages8
JournalNanoscale
Volume8
Issue number7
DOIs
StatePublished - 21 Feb 2016

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