TY - JOUR
T1 - Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering
AU - Hussain, Sajjad
AU - Shehzad, Muhammad Arslan
AU - Vikraman, Dhanasekaran
AU - Khan, Muhammad Farooq
AU - Singh, Jai
AU - Choi, Dong Chul
AU - Seo, Yongho
AU - Eom, Jonghwa
AU - Lee, Wan Gyu
AU - Jung, Jongwan
N1 - Publisher Copyright:
© The Royal Society of Chemistry 2016.
PY - 2016/2/21
Y1 - 2016/2/21
N2 - In this article, we report layer-controlled, continuous and large-area molydenum sulfide (MoS2) growth onto a SiO2/Si substrate by RF sputtering combined with sulfurization. A two-step process was employed to synthesize MoS2 films. In the first step, an atomically thin MoO3 film was deposited by RF magnetron sputtering at 300 °C. Subsequently, the as-sputtered MoO3 film was further subjected to post-annealing and sulfurization processes at 650 °C for 1 hour. It was observed that the number of layers of MoS2 can be controlled by adjusting the sputtering time. The fabricated MoS2 transistors exhibited high mobility values of ∼21 cm2 V-1 s-1 (bilayer) and ∼25 cm2 V-1 s-1 (trilayer), on/off ratios in the range of ∼107 (bilayer) and 104-105 (trilayer), respectively. We believe that our proposed paradigm can start a new method for the growth of MoS2 in future electronics and optoelectronics applications.
AB - In this article, we report layer-controlled, continuous and large-area molydenum sulfide (MoS2) growth onto a SiO2/Si substrate by RF sputtering combined with sulfurization. A two-step process was employed to synthesize MoS2 films. In the first step, an atomically thin MoO3 film was deposited by RF magnetron sputtering at 300 °C. Subsequently, the as-sputtered MoO3 film was further subjected to post-annealing and sulfurization processes at 650 °C for 1 hour. It was observed that the number of layers of MoS2 can be controlled by adjusting the sputtering time. The fabricated MoS2 transistors exhibited high mobility values of ∼21 cm2 V-1 s-1 (bilayer) and ∼25 cm2 V-1 s-1 (trilayer), on/off ratios in the range of ∼107 (bilayer) and 104-105 (trilayer), respectively. We believe that our proposed paradigm can start a new method for the growth of MoS2 in future electronics and optoelectronics applications.
UR - http://www.scopus.com/inward/record.url?scp=84958582175&partnerID=8YFLogxK
U2 - 10.1039/c5nr09032f
DO - 10.1039/c5nr09032f
M3 - Article
AN - SCOPUS:84958582175
SN - 2040-3364
VL - 8
SP - 4340
EP - 4347
JO - Nanoscale
JF - Nanoscale
IS - 7
ER -