Abstract
One-dimensional ZnO nanorods were grown vertically on a (100) Si substrate using a vapor phase transport method. Following the fabrication of ZnO nanorods, Si layers were deposited by rapid thermal chemical vapor deposition (RTCVD) directly on the ZnO nanorod/Si (100) substrate. Field emission scanning electron microscopy revealed that a Si/ZnO nanorod coaxial heterostructure were synthesized vertically oriented along the (002) plane on a Si substrate. X-ray diffraction, Energy dispersive X-ray and Raman spectroscopy revealed that the ZnO nanorods were single crystals with a hexagonal structure, and grew with a c-axis orientation perpendicular to the Si substrate, whereas the Si layer was poly-silicon with cubic structure. These results demonstrated the Si/ZnO nanorod coaxial heterostructure were synthesized successfully on a (100) Si substrate and the ZnO nanorod enables the synthesis of a vertically grown well-aligned Si/ZnO coaxial nanorod heterostructure.
Original language | English |
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Pages (from-to) | 26-31 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 437 |
DOIs | |
State | Published - 1 Mar 2016 |
Keywords
- A1. Nanorod
- A1. Nanostructures
- A3. Chemical vapor deposition processes
- B1. Silicon
- B1. ZnO