Synthesis and characterization of Si/ZnO coaxial nanorod heterostructure on (100) Si substrate

Hak Dong Cho, Hoon Young Cho, Dong Wook Kwak, Tae Won Kang, Im Taek Yoon

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

One-dimensional ZnO nanorods were grown vertically on a (100) Si substrate using a vapor phase transport method. Following the fabrication of ZnO nanorods, Si layers were deposited by rapid thermal chemical vapor deposition (RTCVD) directly on the ZnO nanorod/Si (100) substrate. Field emission scanning electron microscopy revealed that a Si/ZnO nanorod coaxial heterostructure were synthesized vertically oriented along the (002) plane on a Si substrate. X-ray diffraction, Energy dispersive X-ray and Raman spectroscopy revealed that the ZnO nanorods were single crystals with a hexagonal structure, and grew with a c-axis orientation perpendicular to the Si substrate, whereas the Si layer was poly-silicon with cubic structure. These results demonstrated the Si/ZnO nanorod coaxial heterostructure were synthesized successfully on a (100) Si substrate and the ZnO nanorod enables the synthesis of a vertically grown well-aligned Si/ZnO coaxial nanorod heterostructure.

Original languageEnglish
Pages (from-to)26-31
Number of pages6
JournalJournal of Crystal Growth
Volume437
DOIs
StatePublished - 1 Mar 2016

Keywords

  • A1. Nanorod
  • A1. Nanostructures
  • A3. Chemical vapor deposition processes
  • B1. Silicon
  • B1. ZnO

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