Synthesis of a Cu2ZnSnS4(CZTS) absorber layer and metal doped ZnS buffer layer for heterojunction solar cell applications

A. I. Inamdar; Ki Young Jeon; Hyeon Seok Woo; Woong Jung; Hyunsik Im; Hyungsang Kim

doi:10.1149/1.3628622

Synthesis of a Cu₂ZnSnS₄(CZTS) absorber layer and metal doped ZnS buffer layer for heterojunction solar cell applications

A. I. Inamdar, Ki Young Jeon, Hyeon Seok Woo, Woong Jung, Hyunsik Im, Hyungsang Kim

Division of System Semiconductor

Dongguk University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

A novel synthetic strategy was employed to fabricate a Cu ₂ZnSnS₄ (CZTS) absorber layer using a quaternary compound target which has similar properties to that of copper indium gallium selenide (CIGS). A conventional R-F magnetron sputtering system was used to fabricate the CZTS absorber layers on glass substrates. The films were rapidly thermally annealed at 500°C in a nitrogen atmosphere for 20 minutes to improve their crytallinity. The formation of a kesterite structure was confirmed using X-ray diffraction (XRD) measurements. The improved crytallinity of the CZTS was observed with (112) oriented phase. The band gap of the as-deposited and annealed films was found to be 1.97 and 1.55 eV respectively. The films stoichiometry and morphology were observed using scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX) measurements. In addition; buffer layer of ZnS which was doped with metal elements; was fabricated by using a chemical bath deposition (CBD) technique.

Original language	English
Title of host publication	Photovoltaics for the 21st Century 7
Publisher	Electrochemical Society Inc.
Pages	167-175
Number of pages	9
Edition	4
ISBN (Electronic)	9781607682585
ISBN (Print)	9781566779043
DOIs	https://doi.org/10.1149/1.3628622
State	Published - 2011
Event	Photovoltaics for the 21st Century 7 - 220th ECS Meeting - Boston, MA, United States Duration: 9 Oct 2011 → 14 Oct 2011

Publication series

Name	ECS Transactions
Number	4
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Photovoltaics for the 21st Century 7 - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	9/10/11 → 14/10/11

Access to Document

10.1149/1.3628622

Cite this

@inproceedings{c514ce777a914b488eeb088d2ae127ba,

title = "Synthesis of a Cu2ZnSnS4(CZTS) absorber layer and metal doped ZnS buffer layer for heterojunction solar cell applications",

abstract = "A novel synthetic strategy was employed to fabricate a Cu 2ZnSnS4 (CZTS) absorber layer using a quaternary compound target which has similar properties to that of copper indium gallium selenide (CIGS). A conventional R-F magnetron sputtering system was used to fabricate the CZTS absorber layers on glass substrates. The films were rapidly thermally annealed at 500°C in a nitrogen atmosphere for 20 minutes to improve their crytallinity. The formation of a kesterite structure was confirmed using X-ray diffraction (XRD) measurements. The improved crytallinity of the CZTS was observed with (112) oriented phase. The band gap of the as-deposited and annealed films was found to be 1.97 and 1.55 eV respectively. The films stoichiometry and morphology were observed using scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX) measurements. In addition; buffer layer of ZnS which was doped with metal elements; was fabricated by using a chemical bath deposition (CBD) technique.",

author = "Inamdar, {A. I.} and Jeon, {Ki Young} and Woo, {Hyeon Seok} and Woong Jung and Hyunsik Im and Hyungsang Kim",

year = "2011",

doi = "10.1149/1.3628622",

language = "English",

isbn = "9781566779043",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "4",

pages = "167--175",

booktitle = "Photovoltaics for the 21st Century 7",

address = "United States",

edition = "4",

note = "Photovoltaics for the 21st Century 7 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",

}

Inamdar, AI, Jeon, KY, Woo, HS, Jung, W, Im, H & Kim, H 2011, Synthesis of a Cu₂ZnSnS₄(CZTS) absorber layer and metal doped ZnS buffer layer for heterojunction solar cell applications. in Photovoltaics for the 21st Century 7. 4 edn, ECS Transactions, no. 4, vol. 41, Electrochemical Society Inc., pp. 167-175, Photovoltaics for the 21st Century 7 - 220th ECS Meeting, Boston, MA, United States, 9/10/11. https://doi.org/10.1149/1.3628622

Synthesis of a Cu₂ZnSnS₄(CZTS) absorber layer and metal doped ZnS buffer layer for heterojunction solar cell applications. / Inamdar, A. I.; Jeon, Ki Young; Woo, Hyeon Seok et al.
Photovoltaics for the 21st Century 7. 4. ed. Electrochemical Society Inc., 2011. p. 167-175 (ECS Transactions; Vol. 41, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Synthesis of a Cu2ZnSnS4(CZTS) absorber layer and metal doped ZnS buffer layer for heterojunction solar cell applications

AU - Inamdar, A. I.

AU - Jeon, Ki Young

AU - Woo, Hyeon Seok

AU - Jung, Woong

AU - Im, Hyunsik

AU - Kim, Hyungsang

PY - 2011

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N2 - A novel synthetic strategy was employed to fabricate a Cu 2ZnSnS4 (CZTS) absorber layer using a quaternary compound target which has similar properties to that of copper indium gallium selenide (CIGS). A conventional R-F magnetron sputtering system was used to fabricate the CZTS absorber layers on glass substrates. The films were rapidly thermally annealed at 500°C in a nitrogen atmosphere for 20 minutes to improve their crytallinity. The formation of a kesterite structure was confirmed using X-ray diffraction (XRD) measurements. The improved crytallinity of the CZTS was observed with (112) oriented phase. The band gap of the as-deposited and annealed films was found to be 1.97 and 1.55 eV respectively. The films stoichiometry and morphology were observed using scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX) measurements. In addition; buffer layer of ZnS which was doped with metal elements; was fabricated by using a chemical bath deposition (CBD) technique.

AB - A novel synthetic strategy was employed to fabricate a Cu 2ZnSnS4 (CZTS) absorber layer using a quaternary compound target which has similar properties to that of copper indium gallium selenide (CIGS). A conventional R-F magnetron sputtering system was used to fabricate the CZTS absorber layers on glass substrates. The films were rapidly thermally annealed at 500°C in a nitrogen atmosphere for 20 minutes to improve their crytallinity. The formation of a kesterite structure was confirmed using X-ray diffraction (XRD) measurements. The improved crytallinity of the CZTS was observed with (112) oriented phase. The band gap of the as-deposited and annealed films was found to be 1.97 and 1.55 eV respectively. The films stoichiometry and morphology were observed using scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX) measurements. In addition; buffer layer of ZnS which was doped with metal elements; was fabricated by using a chemical bath deposition (CBD) technique.

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BT - Photovoltaics for the 21st Century 7

PB - Electrochemical Society Inc.

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