Abstract
We introduce liquid ammonium sulfide as a reliable and carbon-free sulfur precursor for synthesizing large-area transition metal disulfides (TMdS) in chemical vapor deposition. The flux of sulfur during TMdS growth is precisely controlled by passing a known amount of carrier gas through a bubbling system containing liquid ammonium sulfide. However, controlling the flux of sulfur through the conventional evaporation of sulfur powder using a heating belt remains a challenge. By achieving controllability of sulfur flux, we study growth kinetics such as nucleation density and growth rate. Furthermore, the continuous supply of the sulfur precursor results in the growth of a large-area monolayer and a few layers of MoS2 film. In addition, we present the feasibility of ammonium sulfide as an effective and clean precursor for the growth of a wide range of TMdS, thus enabling it to serve as a universal sulfur precursor.
| Original language | English |
|---|---|
| Pages (from-to) | 60-65 |
| Number of pages | 6 |
| Journal | Journal of the Korean Vacuum Society |
| Volume | 28 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 2019 |
Keywords
- Ammonium sulfide
- Chemical vapor deposition
- Precursor
- Transition metal dichalcogenides
- Two-dimensional materials
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