Tailoring the Threshold Voltage Control of Oxide Thin-Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure

Jung Hoon Han; Dong Yeob Shin; Chihun Sung; Sung Haeng Cho; Byeong Kwon Ju; Kwun Bum Chung; Sooji Nam

doi:10.1002/sdtp.17824

Tailoring the Threshold Voltage Control of Oxide Thin-Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure

Jung Hoon Han, Dong Yeob Shin, Chihun Sung, Sung Haeng Cho, Byeong Kwon Ju, Kwun Bum Chung, Sooji Nam

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of the thin-film transistors (TFTs), we propose heterojunction structure of p-type Tellurium (Te) and n-type Aluminum-Doped Indium-Zinc-Tin- Oxide (Al:IZTO) which acts as electron blocking layer and carrier transporting layer, respectively. We investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single/double deposition of the heterojunction Te layer.

Original language	English
Pages (from-to)	1452-1454
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	55
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.17824
State	Published - 2024
Event	International Symposium, Seminar, and Exhibition, Display Week 2024 - San Jose, United States Duration: 12 May 2024 → 17 May 2024

Keywords

Al:IZTO
electron trapping
heterojunction
metal-oxide thin film transistors
tellurium
Threshold voltage

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10.1002/sdtp.17824

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title = "Tailoring the Threshold Voltage Control of Oxide Thin-Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure",

abstract = "The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of the thin-film transistors (TFTs), we propose heterojunction structure of p-type Tellurium (Te) and n-type Aluminum-Doped Indium-Zinc-Tin- Oxide (Al:IZTO) which acts as electron blocking layer and carrier transporting layer, respectively. We investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single/double deposition of the heterojunction Te layer.",

keywords = "Al:IZTO, electron trapping, heterojunction, metal-oxide thin film transistors, tellurium, Threshold voltage",

author = "Han, {Jung Hoon} and Shin, {Dong Yeob} and Chihun Sung and Cho, {Sung Haeng} and Ju, {Byeong Kwon} and Chung, {Kwun Bum} and Sooji Nam",

note = "Publisher Copyright: {\textcopyright} 2024, John Wiley and Sons Inc. All rights reserved.; International Symposium, Seminar, and Exhibition, Display Week 2024 ; Conference date: 12-05-2024 Through 17-05-2024",

year = "2024",

doi = "10.1002/sdtp.17824",

language = "English",

volume = "55",

pages = "1452--1454",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc",

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Tailoring the Threshold Voltage Control of Oxide Thin-Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure. / Han, Jung Hoon; Shin, Dong Yeob; Sung, Chihun et al.
In: Digest of Technical Papers - SID International Symposium, Vol. 55, No. 1, 2024, p. 1452-1454.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Tailoring the Threshold Voltage Control of Oxide Thin-Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure

AU - Han, Jung Hoon

AU - Shin, Dong Yeob

AU - Sung, Chihun

AU - Cho, Sung Haeng

AU - Ju, Byeong Kwon

AU - Chung, Kwun Bum

AU - Nam, Sooji

PY - 2024

Y1 - 2024

N2 - The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of the thin-film transistors (TFTs), we propose heterojunction structure of p-type Tellurium (Te) and n-type Aluminum-Doped Indium-Zinc-Tin- Oxide (Al:IZTO) which acts as electron blocking layer and carrier transporting layer, respectively. We investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single/double deposition of the heterojunction Te layer.

AB - The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of the thin-film transistors (TFTs), we propose heterojunction structure of p-type Tellurium (Te) and n-type Aluminum-Doped Indium-Zinc-Tin- Oxide (Al:IZTO) which acts as electron blocking layer and carrier transporting layer, respectively. We investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single/double deposition of the heterojunction Te layer.

KW - Al:IZTO

KW - electron trapping

KW - heterojunction

KW - metal-oxide thin film transistors

KW - tellurium

KW - Threshold voltage

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U2 - 10.1002/sdtp.17824

DO - 10.1002/sdtp.17824

M3 - Conference article

AN - SCOPUS:85202602809

SN - 0097-966X

VL - 55

SP - 1452

EP - 1454

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - International Symposium, Seminar, and Exhibition, Display Week 2024

Y2 - 12 May 2024 through 17 May 2024

ER -

Tailoring the Threshold Voltage Control of Oxide Thin-Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure

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Keywords

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