Abstract
The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of the thin-film transistors (TFTs), we propose heterojunction structure of p-type Tellurium (Te) and n-type Aluminum-Doped Indium-Zinc-Tin- Oxide (Al:IZTO) which acts as electron blocking layer and carrier transporting layer, respectively. We investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single/double deposition of the heterojunction Te layer.
| Original language | English |
|---|---|
| Pages (from-to) | 1452-1454 |
| Number of pages | 3 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 55 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2024 |
| Event | International Symposium, Seminar, and Exhibition, Display Week 2024 - San Jose, United States Duration: 12 May 2024 → 17 May 2024 |
Keywords
- Al:IZTO
- electron trapping
- heterojunction
- metal-oxide thin film transistors
- tellurium
- Threshold voltage