TY - JOUR
T1 - Tapered active-region quantum cascade lasers (λ=4.8 μm) for virtual suppression of carrier-leakage currents
AU - Kirch, J. D.
AU - Shin, J. C.
AU - Chang, C. C.
AU - Mawst, L. J.
AU - Botez, D.
AU - Earles, T.
PY - 2012/2/16
Y1 - 2012/2/16
N2 - A new deep-well quantum-cascade laser (QCL) design, for which the barrier layers in the active region are tapered such that their conduction band edges increase in energy from the injection barrier to the exit barrier, results in significant suppression of the carrier leakage in 4.8m-emitting devices. For heatsink temperatures in the 20-60°C range, the characteristic temperature coefficients for threshold, T 0, and slope efficiency, T 1, reach values as high as 231K and 797K, respectively. The T 1 values are more than a factor of two higher than the best reported values for high-performance, 4.6-4.9 μm-emitting QCLs of similar injector-doping level. At 20°C, the threshold-current density for uncoated, 30-period, 3mm-long devices is only ∼1.55kA/cm 2.
AB - A new deep-well quantum-cascade laser (QCL) design, for which the barrier layers in the active region are tapered such that their conduction band edges increase in energy from the injection barrier to the exit barrier, results in significant suppression of the carrier leakage in 4.8m-emitting devices. For heatsink temperatures in the 20-60°C range, the characteristic temperature coefficients for threshold, T 0, and slope efficiency, T 1, reach values as high as 231K and 797K, respectively. The T 1 values are more than a factor of two higher than the best reported values for high-performance, 4.6-4.9 μm-emitting QCLs of similar injector-doping level. At 20°C, the threshold-current density for uncoated, 30-period, 3mm-long devices is only ∼1.55kA/cm 2.
UR - https://www.scopus.com/pages/publications/84863132358
U2 - 10.1049/el.2012.0017
DO - 10.1049/el.2012.0017
M3 - Article
AN - SCOPUS:84863132358
SN - 0013-5194
VL - 48
SP - 234
EP - 235
JO - Electronics Letters
JF - Electronics Letters
IS - 4
ER -