Temperature dependence of resistance switching in Cr doped SrZrO 3 thin films

Mooyoung Kim; Hyungsang Kim; Yongmin Kim; Woong Jung; Hyunsik Im; Kyooho Jung; Jeon Kook Lee

doi:10.3938/jkps.51.1089

Temperature dependence of resistance switching in Cr doped SrZrO ₃ thin films

Mooyoung Kim
, Hyungsang Kim
, Yongmin Kim
, Woong Jung
, Hyunsik Im
, Kyooho Jung
, Jeon Kook Lee

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The temperature dependence of resistive switching of Cr 0.2at%-doped SrZrO₃ (Cr:SZO) thin films grown on SrRuO₃/Si(100) substrates by using radio frequency sputtering has been studied over the temperature range between 300 K and 10 K. The film has a polycrystalline structure. Good and reproducible ON and OFF resistive switching is observed. While the low-resistance ON state show a metallic behavior, the high-resistance OFF current shows a thermal activation behavior. Using an Arrhenius plot, we estimated the barrier height of the initial (before forming) and the OFF states to be ∼24.2 meV and ∼2.14 meV, respectively.

Original language	English
Pages (from-to)	1089-1092
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	51
Issue number	3
DOIs	https://doi.org/10.3938/jkps.51.1089
State	Published - Sep 2007

Keywords

Non-volatile memory
Perovskite material
Resistive switching

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10.3938/jkps.51.1089

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@article{76a2f84afd54447ebb458c417c43acf1,

title = "Temperature dependence of resistance switching in Cr doped SrZrO 3 thin films",

abstract = "The temperature dependence of resistive switching of Cr 0.2at\%-doped SrZrO3 (Cr:SZO) thin films grown on SrRuO3/Si(100) substrates by using radio frequency sputtering has been studied over the temperature range between 300 K and 10 K. The film has a polycrystalline structure. Good and reproducible ON and OFF resistive switching is observed. While the low-resistance ON state show a metallic behavior, the high-resistance OFF current shows a thermal activation behavior. Using an Arrhenius plot, we estimated the barrier height of the initial (before forming) and the OFF states to be ∼24.2 meV and ∼2.14 meV, respectively.",

keywords = "Non-volatile memory, Perovskite material, Resistive switching",

author = "Mooyoung Kim and Hyungsang Kim and Yongmin Kim and Woong Jung and Hyunsik Im and Kyooho Jung and Lee, \{Jeon Kook\}",

year = "2007",

month = sep,

doi = "10.3938/jkps.51.1089",

language = "English",

volume = "51",

pages = "1089--1092",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "3",

}

TY - JOUR

T1 - Temperature dependence of resistance switching in Cr doped SrZrO 3 thin films

AU - Kim, Mooyoung

AU - Kim, Hyungsang

AU - Kim, Yongmin

AU - Jung, Woong

AU - Im, Hyunsik

AU - Jung, Kyooho

AU - Lee, Jeon Kook

PY - 2007/9

Y1 - 2007/9

N2 - The temperature dependence of resistive switching of Cr 0.2at%-doped SrZrO3 (Cr:SZO) thin films grown on SrRuO3/Si(100) substrates by using radio frequency sputtering has been studied over the temperature range between 300 K and 10 K. The film has a polycrystalline structure. Good and reproducible ON and OFF resistive switching is observed. While the low-resistance ON state show a metallic behavior, the high-resistance OFF current shows a thermal activation behavior. Using an Arrhenius plot, we estimated the barrier height of the initial (before forming) and the OFF states to be ∼24.2 meV and ∼2.14 meV, respectively.

AB - The temperature dependence of resistive switching of Cr 0.2at%-doped SrZrO3 (Cr:SZO) thin films grown on SrRuO3/Si(100) substrates by using radio frequency sputtering has been studied over the temperature range between 300 K and 10 K. The film has a polycrystalline structure. Good and reproducible ON and OFF resistive switching is observed. While the low-resistance ON state show a metallic behavior, the high-resistance OFF current shows a thermal activation behavior. Using an Arrhenius plot, we estimated the barrier height of the initial (before forming) and the OFF states to be ∼24.2 meV and ∼2.14 meV, respectively.

KW - Non-volatile memory

KW - Perovskite material

KW - Resistive switching

UR - https://www.scopus.com/pages/publications/34948897515

U2 - 10.3938/jkps.51.1089

DO - 10.3938/jkps.51.1089

M3 - Article

AN - SCOPUS:34948897515

SN - 0374-4884

VL - 51

SP - 1089

EP - 1092

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Temperature dependence of resistance switching in Cr doped SrZrO ₃ thin films

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Keywords

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