Temperature-dependent photoluminescence study of As-doped p-type (Zn0.93Mn0.07)O layer

Sejoon Lee; Yoon Shon; Deuk Young Kim

doi:10.1016/j.tsf.2007.09.013

Temperature-dependent photoluminescence study of As-doped p-type (Zn_0.93Mn_0.07)O layer

Sejoon Lee, Yoon Shon, Deuk Young Kim

Division of System Semiconductor

Dongguk University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The temperature-dependent photoluminescence (PL) properties of the As-doped (Zn_0.93Mn_0.07)O layer, which showed the stable p-type conductivity with carrier concentration of ∼ 10¹⁸ cm^{- 3} and carrier mobility of ∼ 10 cm² V^{- 1} s^{- 1}, were investigated. From fitting of the Bose-Einstein approximation using extracted emission parameters from temperature-dependent PL spectra, it was found that the interaction between exciton and phonon in p-(Zn_0.93Mn_0.07)O:As is higher than that in host material ZnO. This result was confirmed as resulting from the increase of disorder-activated phonon scattering which is attributed to the increase of free carriers donated from implanted As dopants.

Original language	English
Pages (from-to)	4889-4893
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	15
DOIs	https://doi.org/10.1016/j.tsf.2007.09.013
State	Published - 2 Jun 2008

Keywords

Annealing sputtering
As implantation
Temperature-dependent photoluminescence
ZnMnO

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10.1016/j.tsf.2007.09.013

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title = "Temperature-dependent photoluminescence study of As-doped p-type (Zn0.93Mn0.07)O layer",

abstract = "The temperature-dependent photoluminescence (PL) properties of the As-doped (Zn0.93Mn0.07)O layer, which showed the stable p-type conductivity with carrier concentration of ∼ 1018 cm- 3 and carrier mobility of ∼ 10 cm2 V- 1 s- 1, were investigated. From fitting of the Bose-Einstein approximation using extracted emission parameters from temperature-dependent PL spectra, it was found that the interaction between exciton and phonon in p-(Zn0.93Mn0.07)O:As is higher than that in host material ZnO. This result was confirmed as resulting from the increase of disorder-activated phonon scattering which is attributed to the increase of free carriers donated from implanted As dopants.",

keywords = "Annealing sputtering, As implantation, Temperature-dependent photoluminescence, ZnMnO",

author = "Sejoon Lee and Yoon Shon and Kim, {Deuk Young}",

year = "2008",

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doi = "10.1016/j.tsf.2007.09.013",

language = "English",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Temperature-dependent photoluminescence study of As-doped p-type (Zn0.93Mn0.07)O layer

AU - Lee, Sejoon

AU - Shon, Yoon

AU - Kim, Deuk Young

PY - 2008/6/2

Y1 - 2008/6/2

N2 - The temperature-dependent photoluminescence (PL) properties of the As-doped (Zn0.93Mn0.07)O layer, which showed the stable p-type conductivity with carrier concentration of ∼ 1018 cm- 3 and carrier mobility of ∼ 10 cm2 V- 1 s- 1, were investigated. From fitting of the Bose-Einstein approximation using extracted emission parameters from temperature-dependent PL spectra, it was found that the interaction between exciton and phonon in p-(Zn0.93Mn0.07)O:As is higher than that in host material ZnO. This result was confirmed as resulting from the increase of disorder-activated phonon scattering which is attributed to the increase of free carriers donated from implanted As dopants.

AB - The temperature-dependent photoluminescence (PL) properties of the As-doped (Zn0.93Mn0.07)O layer, which showed the stable p-type conductivity with carrier concentration of ∼ 1018 cm- 3 and carrier mobility of ∼ 10 cm2 V- 1 s- 1, were investigated. From fitting of the Bose-Einstein approximation using extracted emission parameters from temperature-dependent PL spectra, it was found that the interaction between exciton and phonon in p-(Zn0.93Mn0.07)O:As is higher than that in host material ZnO. This result was confirmed as resulting from the increase of disorder-activated phonon scattering which is attributed to the increase of free carriers donated from implanted As dopants.

KW - Annealing sputtering

KW - As implantation

KW - Temperature-dependent photoluminescence

KW - ZnMnO

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U2 - 10.1016/j.tsf.2007.09.013

DO - 10.1016/j.tsf.2007.09.013

M3 - Article

AN - SCOPUS:42649119805

SN - 0040-6090

VL - 516

SP - 4889

EP - 4893

JO - Thin Solid Films

JF - Thin Solid Films

IS - 15

ER -

Temperature-dependent photoluminescence study of As-doped p-type (Zn_0.93Mn_0.07)O layer

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Keywords

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