Abstract
We have investigated the electrical transport in a Pt/Cr-doped SZO/SRO thin film, which is one of the candidate materials for a resistive RAM (RRAM), deposited by using pulsed laser deposition (PLD) as a function of temperature. A clear current switching between low-resistance ON and high-resistance OFF states is observed. As the temperature is lowered, the ON-to-OFF current ratio is increased. A pulsed voltage with a frequency of 10 Hz-1 kHz is also applied to explore the non-volatile memory properties, and the transient time is estimated. Stable switching characteristics are observed over the entire range of temperatures and frequencies. Interestingly, the ON-to-OFF current ratio decreases with increasing frequency.
Original language | English |
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Pages (from-to) | 1071-1075 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 49 |
Issue number | 3 |
State | Published - Sep 2006 |
Keywords
- Non-volatile memory
- Perovskite material
- Resistive switching