Temperature-dependent switching current of Cr-doped SrZrO 3/SrRuO3 deposited for ReRAM applications by using PLD

Kyooho Jung, Hongwoo Seo, Nambin Kim, Yongmin Kim, Hyunsik Im, Jae Wan Park, Min Kyu Yang, Jeon Kook Lee

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We have investigated the electrical transport in a Pt/Cr-doped SZO/SRO thin film, which is one of the candidate materials for a resistive RAM (RRAM), deposited by using pulsed laser deposition (PLD) as a function of temperature. A clear current switching between low-resistance ON and high-resistance OFF states is observed. As the temperature is lowered, the ON-to-OFF current ratio is increased. A pulsed voltage with a frequency of 10 Hz-1 kHz is also applied to explore the non-volatile memory properties, and the transient time is estimated. Stable switching characteristics are observed over the entire range of temperatures and frequencies. Interestingly, the ON-to-OFF current ratio decreases with increasing frequency.

Original languageEnglish
Pages (from-to)1071-1075
Number of pages5
JournalJournal of the Korean Physical Society
Volume49
Issue number3
StatePublished - Sep 2006

Keywords

  • Non-volatile memory
  • Perovskite material
  • Resistive switching

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