Temperature-dependent switching current of Cr-doped SrZrO 3/SrRuO3 deposited for ReRAM applications by using PLD

Kyooho Jung; Hongwoo Seo; Nambin Kim; Yongmin Kim; Hyunsik Im; Jae Wan Park; Min Kyu Yang; Jeon Kook Lee

Temperature-dependent switching current of Cr-doped SrZrO ₃/SrRuO₃ deposited for ReRAM applications by using PLD

Kyooho Jung
, Hongwoo Seo
, Nambin Kim
, Yongmin Kim
, Hyunsik Im
, Jae Wan Park
, Min Kyu Yang
, Jeon Kook Lee

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have investigated the electrical transport in a Pt/Cr-doped SZO/SRO thin film, which is one of the candidate materials for a resistive RAM (RRAM), deposited by using pulsed laser deposition (PLD) as a function of temperature. A clear current switching between low-resistance ON and high-resistance OFF states is observed. As the temperature is lowered, the ON-to-OFF current ratio is increased. A pulsed voltage with a frequency of 10 Hz-1 kHz is also applied to explore the non-volatile memory properties, and the transient time is estimated. Stable switching characteristics are observed over the entire range of temperatures and frequencies. Interestingly, the ON-to-OFF current ratio decreases with increasing frequency.

Original language	English
Pages (from-to)	1071-1075
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	49
Issue number	3
State	Published - Sep 2006

Keywords

Non-volatile memory
Perovskite material
Resistive switching

Cite this

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title = "Temperature-dependent switching current of Cr-doped SrZrO 3/SrRuO3 deposited for ReRAM applications by using PLD",

abstract = "We have investigated the electrical transport in a Pt/Cr-doped SZO/SRO thin film, which is one of the candidate materials for a resistive RAM (RRAM), deposited by using pulsed laser deposition (PLD) as a function of temperature. A clear current switching between low-resistance ON and high-resistance OFF states is observed. As the temperature is lowered, the ON-to-OFF current ratio is increased. A pulsed voltage with a frequency of 10 Hz-1 kHz is also applied to explore the non-volatile memory properties, and the transient time is estimated. Stable switching characteristics are observed over the entire range of temperatures and frequencies. Interestingly, the ON-to-OFF current ratio decreases with increasing frequency.",

keywords = "Non-volatile memory, Perovskite material, Resistive switching",

author = "Kyooho Jung and Hongwoo Seo and Nambin Kim and Yongmin Kim and Hyunsik Im and Park, \{Jae Wan\} and Yang, \{Min Kyu\} and Lee, \{Jeon Kook\}",

year = "2006",

month = sep,

language = "English",

volume = "49",

pages = "1071--1075",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "3",

}

TY - JOUR

T1 - Temperature-dependent switching current of Cr-doped SrZrO 3/SrRuO3 deposited for ReRAM applications by using PLD

AU - Jung, Kyooho

AU - Seo, Hongwoo

AU - Kim, Nambin

AU - Kim, Yongmin

AU - Im, Hyunsik

AU - Park, Jae Wan

AU - Yang, Min Kyu

AU - Lee, Jeon Kook

PY - 2006/9

Y1 - 2006/9

N2 - We have investigated the electrical transport in a Pt/Cr-doped SZO/SRO thin film, which is one of the candidate materials for a resistive RAM (RRAM), deposited by using pulsed laser deposition (PLD) as a function of temperature. A clear current switching between low-resistance ON and high-resistance OFF states is observed. As the temperature is lowered, the ON-to-OFF current ratio is increased. A pulsed voltage with a frequency of 10 Hz-1 kHz is also applied to explore the non-volatile memory properties, and the transient time is estimated. Stable switching characteristics are observed over the entire range of temperatures and frequencies. Interestingly, the ON-to-OFF current ratio decreases with increasing frequency.

AB - We have investigated the electrical transport in a Pt/Cr-doped SZO/SRO thin film, which is one of the candidate materials for a resistive RAM (RRAM), deposited by using pulsed laser deposition (PLD) as a function of temperature. A clear current switching between low-resistance ON and high-resistance OFF states is observed. As the temperature is lowered, the ON-to-OFF current ratio is increased. A pulsed voltage with a frequency of 10 Hz-1 kHz is also applied to explore the non-volatile memory properties, and the transient time is estimated. Stable switching characteristics are observed over the entire range of temperatures and frequencies. Interestingly, the ON-to-OFF current ratio decreases with increasing frequency.

KW - Non-volatile memory

KW - Perovskite material

KW - Resistive switching

UR - https://www.scopus.com/pages/publications/33749836016

M3 - Article

AN - SCOPUS:33749836016

SN - 0374-4884

VL - 49

SP - 1071

EP - 1075

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Temperature-dependent switching current of Cr-doped SrZrO ₃/SrRuO₃ deposited for ReRAM applications by using PLD

Abstract

Keywords

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