Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2

Youngsin Park; Christopher C.S. Chan; Robert A. Taylor; Yongchul Kim; Nammee Kim; Yongcheol Jo; Seung W. Lee; Woochul Yang; Hyunsik Im; Geunsik Lee

doi:10.1038/s41598-018-23788-3

Temperature induced crossing in the optical bandgap of mono and bilayer MoS₂ on SiO₂

Youngsin Park, Christopher C.S. Chan, Robert A. Taylor, Yongchul Kim, Nammee Kim, Yongcheol Jo, Seung W. Lee, Woochul Yang, Hyunsik Im, Geunsik Lee

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Photoluminescence measurements in mono-And bilayer-MoS₂ on SiO₂ were undertaken to determine the thermal effect of the MoS₂/SiO₂ interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS₂ were lower and weaker than those from bilayer MoS₂ at low temperatures, whilst the opposite was true at high temperatures above 200 K. Density functional theory calculations suggest that the observed optical bandgap crossover is caused by a weaker substrate coupling to the bilayer than to the monolayer.

Original language	English
Article number	5380
Journal	Scientific Reports
Volume	8
Issue number	1
DOIs	https://doi.org/10.1038/s41598-018-23788-3
State	Published - 1 Dec 2018

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title = "Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2",

abstract = "Photoluminescence measurements in mono-And bilayer-MoS2 on SiO2 were undertaken to determine the thermal effect of the MoS2/SiO2 interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS2 were lower and weaker than those from bilayer MoS2 at low temperatures, whilst the opposite was true at high temperatures above 200 K. Density functional theory calculations suggest that the observed optical bandgap crossover is caused by a weaker substrate coupling to the bilayer than to the monolayer.",

author = "Youngsin Park and Chan, {Christopher C.S.} and Taylor, {Robert A.} and Yongchul Kim and Nammee Kim and Yongcheol Jo and Lee, {Seung W.} and Woochul Yang and Hyunsik Im and Geunsik Lee",

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AU - Park, Youngsin

AU - Chan, Christopher C.S.

AU - Taylor, Robert A.

AU - Kim, Yongchul

AU - Kim, Nammee

AU - Jo, Yongcheol

AU - Lee, Seung W.

AU - Yang, Woochul

AU - Im, Hyunsik

AU - Lee, Geunsik

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Photoluminescence measurements in mono-And bilayer-MoS2 on SiO2 were undertaken to determine the thermal effect of the MoS2/SiO2 interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS2 were lower and weaker than those from bilayer MoS2 at low temperatures, whilst the opposite was true at high temperatures above 200 K. Density functional theory calculations suggest that the observed optical bandgap crossover is caused by a weaker substrate coupling to the bilayer than to the monolayer.

AB - Photoluminescence measurements in mono-And bilayer-MoS2 on SiO2 were undertaken to determine the thermal effect of the MoS2/SiO2 interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS2 were lower and weaker than those from bilayer MoS2 at low temperatures, whilst the opposite was true at high temperatures above 200 K. Density functional theory calculations suggest that the observed optical bandgap crossover is caused by a weaker substrate coupling to the bilayer than to the monolayer.

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VL - 8

JO - Scientific Reports

JF - Scientific Reports

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M1 - 5380

ER -

Temperature induced crossing in the optical bandgap of mono and bilayer MoS₂ on SiO₂

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