Temperature stress response of germanium MOS capacitors with HfO 2/HfSiON gate dielectrics

Rajan Arora, B. W. Schmidt, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, B. R. Rogers, K. B. Chung, G. Lucovsky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

Temperature and electrical stress-induced degradation in germanium substrate MOS capacitors with HfO2/HfSiON gate dielectrics is reported. The accumulation capacitance decreases with temperature stress due to diffusion of germanium into the high-K dielectric. The interface trap and border trap densities decrease due to oxide growth at the oxide-germanium interface.

Original languageEnglish
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
PublisherElectrochemical Society Inc.
Pages803-814
Number of pages12
Edition2
ISBN (Electronic)9781607680604
ISBN (Print)9781566777100
DOIs
StatePublished - 2009
EventInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States
Duration: 24 May 200929 May 2009

Publication series

NameECS Transactions
Number2
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CitySan Francisco, CA
Period24/05/0929/05/09

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