@inproceedings{a0f8faccdd1b43959caf8957a6e5d63a,
title = "Temperature stress response of germanium MOS capacitors with HfO 2/HfSiON gate dielectrics",
abstract = "Temperature and electrical stress-induced degradation in germanium substrate MOS capacitors with HfO2/HfSiON gate dielectrics is reported. The accumulation capacitance decreases with temperature stress due to diffusion of germanium into the high-K dielectric. The interface trap and border trap densities decrease due to oxide growth at the oxide-germanium interface.",
author = "Rajan Arora and Schmidt, {B. W.} and Fleetwood, {D. M.} and Schrimpf, {R. D.} and Galloway, {K. F.} and Rogers, {B. R.} and Chung, {K. B.} and G. Lucovsky",
year = "2009",
doi = "10.1149/1.3122135",
language = "English",
isbn = "9781566777100",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "803--814",
booktitle = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10",
address = "United States",
edition = "2",
note = "International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society ; Conference date: 24-05-2009 Through 29-05-2009",
}