Terahertz emission spectroscopy of InAs nanowires

Gyuseok Lee, Meehyun Lim, Youngwoong Do, Soonsung Lee, Hyeona Kang, Jae Cheol Shin, Haewook Han

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We measured terahertz (THz) emission from the vertically aligned indium arsenide (InAs) nanowires using THz time-domain spectroscopy. The photoexcited InAs nanowires were grown by metalorganic chemical vapor deposition on type <111> silicon substrate. Experimental results shows that THz emission mechanism of InAs nanowires are very different from that of bulk InAs substrates.

Original languageEnglish
Title of host publication2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013
DOIs
StatePublished - 2013
Event2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 - Mainz, Germany
Duration: 1 Sep 20136 Sep 2013

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013
Country/TerritoryGermany
CityMainz
Period1/09/136/09/13

Fingerprint

Dive into the research topics of 'Terahertz emission spectroscopy of InAs nanowires'. Together they form a unique fingerprint.

Cite this