The appearance of clear ferromagnetism for p-type InMnP:Zn implanted with Mn of 1 at.%

Yoon Shon; H. C. Jeon; Sejoon Lee; C. S. Park; Eun Kyu Kim; D. J. Fu; X. J. Fan; Chong S. Yoon; Jeoung Ju Lee

doi:10.1016/j.mseb.2007.07.093

The appearance of clear ferromagnetism for p-type InMnP:Zn implanted with Mn of 1 at.%

Yoon Shon, H. C. Jeon, Sejoon Lee, C. S. Park, Eun Kyu Kim, D. J. Fu, X. J. Fan, Chong S. Yoon, Jeoung Ju Lee

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The p-type InP:Zn was prepared by the liquid encapsulated Czochralski method and subsequently implanted with Mn⁺ of 5 × 10¹⁵ cm^-2. The results of energy dispersive X-ray displayed that the concentration of incorporated Mn into InP:Zn is 1 at.%. The cross-sectional transmission electron microscopy showed that the thickness of Mn-incorporated layer was ∼300 nm. For photoluminescence measurements, the Mn-related optical transitions caused by incorporation of Mn were broadly observed at the energy region of 1.034, 0.985, and 0.958 eV. The samples clearly showed ferromagnetic hysteresis loops at 10 K, and the ferromagnetic behavior was observed to persist up to 360 K. Thus, the Curie temperature of Mn⁺-implanted InMnP:Zn (Mn ∼ 1 at.%) is expected to be above 300 K. It is found that a room-temperature-ferromagnetism of InMnP:Zn can be formed by ion implantation of a relatively low concentration of Mn (1 at.%).

Original language	English
Pages (from-to)	220-224
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	146
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2007.07.093
State	Published - 15 May 2008

Keywords

Ferromagnetic semiconductor
InMnP:Zn
Mn ion implantation

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10.1016/j.mseb.2007.07.093

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@article{e7a4988c9afe4ae3bfb9a13e3839dba4,

title = "The appearance of clear ferromagnetism for p-type InMnP:Zn implanted with Mn of 1 at.%",

abstract = "The p-type InP:Zn was prepared by the liquid encapsulated Czochralski method and subsequently implanted with Mn+ of 5 × 1015 cm-2. The results of energy dispersive X-ray displayed that the concentration of incorporated Mn into InP:Zn is 1 at.%. The cross-sectional transmission electron microscopy showed that the thickness of Mn-incorporated layer was ∼300 nm. For photoluminescence measurements, the Mn-related optical transitions caused by incorporation of Mn were broadly observed at the energy region of 1.034, 0.985, and 0.958 eV. The samples clearly showed ferromagnetic hysteresis loops at 10 K, and the ferromagnetic behavior was observed to persist up to 360 K. Thus, the Curie temperature of Mn+-implanted InMnP:Zn (Mn ∼ 1 at.%) is expected to be above 300 K. It is found that a room-temperature-ferromagnetism of InMnP:Zn can be formed by ion implantation of a relatively low concentration of Mn (1 at.%).",

keywords = "Ferromagnetic semiconductor, InMnP:Zn, Mn ion implantation",

author = "Yoon Shon and Jeon, {H. C.} and Sejoon Lee and Park, {C. S.} and Kim, {Eun Kyu} and Fu, {D. J.} and Fan, {X. J.} and Yoon, {Chong S.} and Lee, {Jeoung Ju}",

year = "2008",

month = may,

day = "15",

doi = "10.1016/j.mseb.2007.07.093",

language = "English",

volume = "146",

pages = "220--224",

journal = "Materials Science and Engineering: B",

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publisher = "Elsevier Ltd",

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TY - JOUR

T1 - The appearance of clear ferromagnetism for p-type InMnP:Zn implanted with Mn of 1 at.%

AU - Shon, Yoon

AU - Jeon, H. C.

AU - Lee, Sejoon

AU - Park, C. S.

AU - Kim, Eun Kyu

AU - Fu, D. J.

AU - Fan, X. J.

AU - Yoon, Chong S.

AU - Lee, Jeoung Ju

PY - 2008/5/15

Y1 - 2008/5/15

N2 - The p-type InP:Zn was prepared by the liquid encapsulated Czochralski method and subsequently implanted with Mn+ of 5 × 1015 cm-2. The results of energy dispersive X-ray displayed that the concentration of incorporated Mn into InP:Zn is 1 at.%. The cross-sectional transmission electron microscopy showed that the thickness of Mn-incorporated layer was ∼300 nm. For photoluminescence measurements, the Mn-related optical transitions caused by incorporation of Mn were broadly observed at the energy region of 1.034, 0.985, and 0.958 eV. The samples clearly showed ferromagnetic hysteresis loops at 10 K, and the ferromagnetic behavior was observed to persist up to 360 K. Thus, the Curie temperature of Mn+-implanted InMnP:Zn (Mn ∼ 1 at.%) is expected to be above 300 K. It is found that a room-temperature-ferromagnetism of InMnP:Zn can be formed by ion implantation of a relatively low concentration of Mn (1 at.%).

AB - The p-type InP:Zn was prepared by the liquid encapsulated Czochralski method and subsequently implanted with Mn+ of 5 × 1015 cm-2. The results of energy dispersive X-ray displayed that the concentration of incorporated Mn into InP:Zn is 1 at.%. The cross-sectional transmission electron microscopy showed that the thickness of Mn-incorporated layer was ∼300 nm. For photoluminescence measurements, the Mn-related optical transitions caused by incorporation of Mn were broadly observed at the energy region of 1.034, 0.985, and 0.958 eV. The samples clearly showed ferromagnetic hysteresis loops at 10 K, and the ferromagnetic behavior was observed to persist up to 360 K. Thus, the Curie temperature of Mn+-implanted InMnP:Zn (Mn ∼ 1 at.%) is expected to be above 300 K. It is found that a room-temperature-ferromagnetism of InMnP:Zn can be formed by ion implantation of a relatively low concentration of Mn (1 at.%).

KW - Ferromagnetic semiconductor

KW - InMnP:Zn

KW - Mn ion implantation

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U2 - 10.1016/j.mseb.2007.07.093

DO - 10.1016/j.mseb.2007.07.093

M3 - Article

AN - SCOPUS:37349044587

SN - 0921-5107

VL - 146

SP - 220

EP - 224

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

ER -

The appearance of clear ferromagnetism for p-type InMnP:Zn implanted with Mn of 1 at.%

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Keywords

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