The effect of coupling barrier thickness on structural and optical properties in asymmetrically coupled GaN/ Al0.5 Ga0.5 N/GaN multiquantum wells

Young S. Park, Chang Mo Park, Bo Ra Hwang, T. W. Kang, Yongmin Kim, Hyunsik Im, Myung Soo Han

Research output: Contribution to journalArticlepeer-review

Abstract

The structural and optical properties of coupled, multiquantum-well structures, consisting of GaN (10 Å) / Al0.5 Ga0.5 N (12 or 22 Å) /GaN (20 Å) bounded by Al0.5 Ga0.5 N (100 Å) barriers, were investigated by high resolution x-ray diffraction, transmission electron microscopy, and photoluminescence measurements. We studied the carrier dynamics in asymmetric double quantum wells by analyzing the temperature-dependent and time-resolved photoluminescence spectra. Carrier tunneling between the coupled quantum wells affected the optical properties. In our analysis of the effect of the carrier tunneling in terms of free-carrier screening, the effect was much weaker for the sample with Tib =12 Å than for that with Tib =22 Å.

Original languageEnglish
Article number103511
JournalJournal of Applied Physics
Volume102
Issue number10
DOIs
StatePublished - 2007

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