Abstract
The electrical stability of amorphous HfInZnO (HIZO) thin-film transistors (TFTs) was investigated under static and dynamic stress conditions, with simultaneous visible light radiation. The extent of device degradation is found to be strongly sensitive to the gate voltage, pulse duty ratio, pulse frequency, and exposure to visible light. Dynamic stress experiments demonstrate that highly stable devices can be realized by adjusting the pulse duty ratio and frequency, which suggests that amorphous HIZO TFTs are a promising candidate of switching devices for large-area high-resolution AMLCD applications.
Original language | English |
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Article number | 5680586 |
Pages (from-to) | 164-166 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2011 |
Keywords
- Dynamic stress
- HfInZnO
- instability
- thin-film transistor (TFT)