The effect of mechanical stress on the properties and stability of In-Ga-Zn-O thin film transistors

Chang Sun Kim, Nguyen Dinh Trung, Hyun Suk Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Amorphous ln-Ga-Zn-0 (a-IGZO) thin-film transistors (TFTs) were fabricated on polyimide/glass substrates and mechanically detached from carrier glass. The electrical properties and device stability were evaluated on both flat and bending state. The obtained bending performance and bias-stability of a-IGZO TFTs were demonstrated to be promising for the next-generation flexible display.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages1771-1772
Number of pages2
ISBN (Electronic)9781510845503
StatePublished - 2015
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 9 Dec 201511 Dec 2015

Publication series

NameProceedings of the International Display Workshops
Volume3
ISSN (Print)1883-2490

Conference

Conference22nd International Display Workshops, IDW 2015
Country/TerritoryJapan
CityOtsu
Period9/12/1511/12/15

Keywords

  • Bending
  • Flexible
  • Stability
  • TFT

Fingerprint

Dive into the research topics of 'The effect of mechanical stress on the properties and stability of In-Ga-Zn-O thin film transistors'. Together they form a unique fingerprint.

Cite this