Abstract
Amorphous ln-Ga-Zn-0 (a-IGZO) thin-film transistors (TFTs) were fabricated on polyimide/glass substrates and mechanically detached from carrier glass. The electrical properties and device stability were evaluated on both flat and bending state. The obtained bending performance and bias-stability of a-IGZO TFTs were demonstrated to be promising for the next-generation flexible display.
| Original language | English |
|---|---|
| Title of host publication | 22nd International Display Workshops, IDW 2015 |
| Publisher | International Display Workshops |
| Pages | 1771-1772 |
| Number of pages | 2 |
| ISBN (Electronic) | 9781510845503 |
| State | Published - 2015 |
| Event | 22nd International Display Workshops, IDW 2015 - Otsu, Japan Duration: 9 Dec 2015 → 11 Dec 2015 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 3 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 22nd International Display Workshops, IDW 2015 |
|---|---|
| Country/Territory | Japan |
| City | Otsu |
| Period | 9/12/15 → 11/12/15 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 3 Good Health and Well-being
Keywords
- Bending
- Flexible
- Stability
- TFT
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