The effect of Nb doping on the performance and stability of TiOx devices

Kyung Chul Ok, Yoseb Park, Kwun Bum Chung, Jin Seong Park

Research output: Contribution to journalArticlepeer-review

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Abstract

The effect of niobium (Nb) doping on the performance and stability of TiOx -based thin-film transistors (TFTs) was studied. While sputtered TiOx has an initial amorphous phase and begins to crystallize to anatase at an annealing temperature of 450 °C, Nb-doped TiOx preserves the amorphous structure up to annealing temperatures as high as 550 °C. TFT devices fabricated using Nb-doped TiOx as the active layer exhibit higher field-effect mobility and better stability upon negative and positive bias stress compared to pure TiOx devices. X-ray photoelectron spectroscopy analyses indicate that Nb doping induces higher levels of oxygen deficiency and a considerable amount of defect states near the valence band, which cannot account for the higher device stability. It is thus suggested that the grain boundaries in crystalline TiOx TiO x may act as the major charge traps, which induce larger shifts in threshold voltage (Vth) upon bias stress.

Original languageEnglish
Article number295102
JournalJournal Physics D: Applied Physics
Volume46
Issue number29
DOIs
StatePublished - 24 Jul 2013

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