The impact of atomic layer deposited SiO₂ passivation for high-k Ta_1-xZr_xO on the InP substrate

Engineering

• Silicon Dioxide 100%
• Passivation 100%
• Atomic Layer 100%
• Passivation Layer 83%
• Gate Dielectric 50%
• Dielectric Films 50%
• Ray Photoelectron Spectroscopy 33%
• Dielectrics 33%
• Fermi Level 33%
• Metal Oxide Semiconductor 33%
• Interfacial Layer 16%
• Layer Thickness 16%
• Electrical Conductivity 16%
• Conductivity Measurement 16%

Material Science

• Indium 100%
• Dielectric Films 50%
• X-Ray Photoelectron Spectroscopy 33%
• Metal Oxide 33%
• Dielectric Material 33%
• Oxide Semiconductor 33%
• Capacitor 16%
• Film 16%
• Chemical Property 16%
• Chemical Bonding 16%
• Semiconductor Structure 16%
• Physical Property 16%
• Electrical Conductivity 16%