Abstract
The performance and stability of hafnium-indium-zinc-oxide (HIZO) thin-film transistors (TFTs) are evaluated with respect to the relative content in In and Zn cations. While devices that incorporate an active layer with an In-rich composition exhibit higher field-effect mobility values, they undergo larger negative shifts in Vth upon negative-bias illumination stress (NBIS). Density-of-states analyses suggest that a higher In/Zn ratio in the semiconductor results in larger defect states in the vicinity of the semiconductor/gate-insulator interface. Accordingly, these defect states may act as carrier traps that accelerate the degradation of HIZO TFTs upon NBIS.
Original language | English |
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Article number | 5985469 |
Pages (from-to) | 1251-1253 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2011 |
Keywords
- Cation composition
- Hf-In-Zn-O (HIZO)
- thin-film transistor (TFT)