The influence of sputtering power and O2 /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination

Hyun Suk Kim; Kyung Bae Park; Kyoung Seok Son; Joon Seok Park; Wan Joo Maeng; Tae Sang Kim; Kwang Hee Lee; Eok Su Kim; Jiyoul Lee; Joonki Suh; Jong Baek Seon; Myung Kwan Ryu; Sang Yoon Lee; Kimoon Lee; Seongil Im

doi:10.1063/1.3488823

The influence of sputtering power and O₂ /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination

Hyun Suk Kim, Kyung Bae Park, Kyoung Seok Son, Joon Seok Park, Wan Joo Maeng, Tae Sang Kim, Kwang Hee Lee, Eok Su Kim, Jiyoul Lee, Joonki Suh, Jong Baek Seon, Myung Kwan Ryu, Sang Yoon Lee, Kimoon Lee, Seongil Im

Department of Energy and Materials Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

The performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied. The extent of device degradation upon negative bias stress with the presence of visible light is found to be strongly sensitive to the extent of photoelectric effect in the oxide semiconductor. Highly stable devices were fabricated by optimizing the deposition conditions of HfInZnO films, where the combination of high sputtering power and high O₂ /Ar gas flow ratio was found to result in the highest stability under bias stress experiments.

Original language	English
Article number	102103
Journal	Applied Physics Letters
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.3488823
State	Published - 6 Sep 2010

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Kim, H. S., Park, K. B., Son, K. S., Park, J. S., Maeng, W. J., Kim, T. S., Lee, K. H., Kim, E. S., Lee, J., Suh, J., Seon, J. B., Ryu, M. K., Lee, S. Y., Lee, K., & Im, S. (2010). The influence of sputtering power and O₂ /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination. Applied Physics Letters, 97(10), Article 102103. https://doi.org/10.1063/1.3488823

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title = "The influence of sputtering power and O2 /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination",

abstract = "The performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied. The extent of device degradation upon negative bias stress with the presence of visible light is found to be strongly sensitive to the extent of photoelectric effect in the oxide semiconductor. Highly stable devices were fabricated by optimizing the deposition conditions of HfInZnO films, where the combination of high sputtering power and high O2 /Ar gas flow ratio was found to result in the highest stability under bias stress experiments.",

author = "Kim, {Hyun Suk} and Park, {Kyung Bae} and Son, {Kyoung Seok} and Park, {Joon Seok} and Maeng, {Wan Joo} and Kim, {Tae Sang} and Lee, {Kwang Hee} and Kim, {Eok Su} and Jiyoul Lee and Joonki Suh and Seon, {Jong Baek} and Ryu, {Myung Kwan} and Lee, {Sang Yoon} and Kimoon Lee and Seongil Im",

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doi = "10.1063/1.3488823",

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Kim, HS, Park, KB, Son, KS, Park, JS, Maeng, WJ, Kim, TS, Lee, KH, Kim, ES, Lee, J, Suh, J, Seon, JB, Ryu, MK, Lee, SY, Lee, K & Im, S 2010, 'The influence of sputtering power and O₂ /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination', Applied Physics Letters, vol. 97, no. 10, 102103. https://doi.org/10.1063/1.3488823

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T1 - The influence of sputtering power and O2 /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination

AU - Kim, Hyun Suk

AU - Park, Kyung Bae

AU - Son, Kyoung Seok

AU - Park, Joon Seok

AU - Maeng, Wan Joo

AU - Kim, Tae Sang

AU - Lee, Kwang Hee

AU - Kim, Eok Su

AU - Lee, Jiyoul

AU - Suh, Joonki

AU - Seon, Jong Baek

AU - Ryu, Myung Kwan

AU - Lee, Sang Yoon

AU - Lee, Kimoon

AU - Im, Seongil

PY - 2010/9/6

Y1 - 2010/9/6

N2 - The performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied. The extent of device degradation upon negative bias stress with the presence of visible light is found to be strongly sensitive to the extent of photoelectric effect in the oxide semiconductor. Highly stable devices were fabricated by optimizing the deposition conditions of HfInZnO films, where the combination of high sputtering power and high O2 /Ar gas flow ratio was found to result in the highest stability under bias stress experiments.

AB - The performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied. The extent of device degradation upon negative bias stress with the presence of visible light is found to be strongly sensitive to the extent of photoelectric effect in the oxide semiconductor. Highly stable devices were fabricated by optimizing the deposition conditions of HfInZnO films, where the combination of high sputtering power and high O2 /Ar gas flow ratio was found to result in the highest stability under bias stress experiments.

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VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

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ER -

The influence of sputtering power and O₂ /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination

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