Abstract
This study examined the performance and stability of amorphous Hf-In-Zn-O (a-HIZO) thin film transistors (TFTs) with different sputtering conditions (DC and RF) for the active layer. The field-effect mobility and stability under negative bias illumination stress for the DC device significantly improved to 13.7 cm2/Vs and -1.5 V shift of threshold voltage, respectively, compared to those (2.4 cm2/Vs and -2.4 V shift) for the RF device. It is suggested that the incorporation of hydrogen into the RF-sputtered HIZO film has generated larger defect states in the vicinity of the HIZO/gate insulator interface, which may act as hole trap centers. This work demonstrates that the oxide TFTs combined with DC magnetron sputtering will be a prominent candidate for commercial production of the TFT backplane toward next-generation display applications.
Original language | English |
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Pages (from-to) | 220-223 |
Number of pages | 4 |
Journal | Journal of Electroceramics |
Volume | 32 |
Issue number | 2-3 |
DOIs | |
State | Published - May 2014 |
Keywords
- Hf-In-Zn-O (HIZO)
- negative bias illumination stability (NBIS)
- oxide semiconductor
- thin film transistor