@inproceedings{40b9c9ce47924116b2c6aa8a032d103d,
title = "The study of hafnium silicate by NO gas annealing treatment",
abstract = "The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas annealing, were investigated by XPS, NEXAFS, TEM and C-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The suppression of phase separation was observed in Hf-silicate films with high nitrogen contents. The negative shift of threshold voltage is caused by the incorporation of nitrogen in the hafnium silicate films.",
author = "Suh, {Dong Chan} and Dongwon Lee and Chung, {Kwun Bum} and Cho, {Mann Ho} and Ko, {Dae Hong}",
year = "2007",
doi = "10.1149/1.2727396",
language = "English",
isbn = "9781566775502",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "129--139",
booktitle = "ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS",
address = "United States",
edition = "1",
note = "International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}