Abstract
Diamond films have been synthesized on the adamantane-coated Si (1 0 0) substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases with a growth rate of ∼6.7 nm/min. The substrate temperature was ∼475 °C during diamond deposition. The films obtained have good crystallinity that is characterized by scanning electron microscopy and Raman spectrometry. X-ray photoelectron spectroscopy analysis has confirmed that diamond nucleation and growth are on SiC rather than clean Si. The possible mechanism of high rate growth diamond films has been demonstrated.
Original language | English |
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Pages (from-to) | 641-645 |
Number of pages | 5 |
Journal | Chemical Engineering Journal |
Volume | 158 |
Issue number | 3 |
DOIs | |
State | Published - 15 Apr 2010 |
Keywords
- Adamantane
- Diamond
- MPCVD