The synthesis of diamond films on adamantane-coated Si substrate at low temperature

Rajanish N. Tiwari; Jitendra N. Tiwari; Li Chang

doi:10.1016/j.cej.2010.01.024

The synthesis of diamond films on adamantane-coated Si substrate at low temperature

Rajanish N. Tiwari
, Jitendra N. Tiwari
, Li Chang

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Diamond films have been synthesized on the adamantane-coated Si (1 0 0) substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases with a growth rate of ∼6.7 nm/min. The substrate temperature was ∼475 °C during diamond deposition. The films obtained have good crystallinity that is characterized by scanning electron microscopy and Raman spectrometry. X-ray photoelectron spectroscopy analysis has confirmed that diamond nucleation and growth are on SiC rather than clean Si. The possible mechanism of high rate growth diamond films has been demonstrated.

Original language	English
Pages (from-to)	641-645
Number of pages	5
Journal	Chemical Engineering Journal
Volume	158
Issue number	3
DOIs	https://doi.org/10.1016/j.cej.2010.01.024
State	Published - 15 Apr 2010

Keywords

Adamantane
Diamond
MPCVD

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10.1016/j.cej.2010.01.024

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title = "The synthesis of diamond films on adamantane-coated Si substrate at low temperature",

abstract = "Diamond films have been synthesized on the adamantane-coated Si (1 0 0) substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases with a growth rate of ∼6.7 nm/min. The substrate temperature was ∼475 °C during diamond deposition. The films obtained have good crystallinity that is characterized by scanning electron microscopy and Raman spectrometry. X-ray photoelectron spectroscopy analysis has confirmed that diamond nucleation and growth are on SiC rather than clean Si. The possible mechanism of high rate growth diamond films has been demonstrated.",

keywords = "Adamantane, Diamond, MPCVD",

author = "Tiwari, \{Rajanish N.\} and Tiwari, \{Jitendra N.\} and Li Chang",

year = "2010",

month = apr,

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doi = "10.1016/j.cej.2010.01.024",

language = "English",

volume = "158",

pages = "641--645",

journal = "Chemical Engineering Journal",

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T1 - The synthesis of diamond films on adamantane-coated Si substrate at low temperature

AU - Tiwari, Rajanish N.

AU - Tiwari, Jitendra N.

AU - Chang, Li

PY - 2010/4/15

Y1 - 2010/4/15

N2 - Diamond films have been synthesized on the adamantane-coated Si (1 0 0) substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases with a growth rate of ∼6.7 nm/min. The substrate temperature was ∼475 °C during diamond deposition. The films obtained have good crystallinity that is characterized by scanning electron microscopy and Raman spectrometry. X-ray photoelectron spectroscopy analysis has confirmed that diamond nucleation and growth are on SiC rather than clean Si. The possible mechanism of high rate growth diamond films has been demonstrated.

AB - Diamond films have been synthesized on the adamantane-coated Si (1 0 0) substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases with a growth rate of ∼6.7 nm/min. The substrate temperature was ∼475 °C during diamond deposition. The films obtained have good crystallinity that is characterized by scanning electron microscopy and Raman spectrometry. X-ray photoelectron spectroscopy analysis has confirmed that diamond nucleation and growth are on SiC rather than clean Si. The possible mechanism of high rate growth diamond films has been demonstrated.

KW - Adamantane

KW - Diamond

KW - MPCVD

UR - https://www.scopus.com/pages/publications/77649337280

U2 - 10.1016/j.cej.2010.01.024

DO - 10.1016/j.cej.2010.01.024

M3 - Article

AN - SCOPUS:77649337280

SN - 1385-8947

VL - 158

SP - 641

EP - 645

JO - Chemical Engineering Journal

JF - Chemical Engineering Journal

IS - 3

ER -

The synthesis of diamond films on adamantane-coated Si substrate at low temperature

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Keywords

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