The X-valley transport in GaAs/AlAs triple barrier structures

Peng Cheng; Byung Gook Park; Sam Dong Kim; James S. Harris

doi:10.1063/1.343151

The X-valley transport in GaAs/AlAs triple barrier structures

Peng Cheng, Byung Gook Park, Sam Dong Kim, James S. Harris

Department of Electronics & Electrical Engineering

Stanford University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Electron transport through the X valley of GaAs/AlAs triple-barrier structures (TBS) grown by molecular-beam epitaxy has been studied. Negative differential resistance is observed at 77 K in one type of TBS and is identified as the result of electron transport through both the Γ and X valleys of TBS. In another type of TBS, resonant tunneling through the X valley of GaAs/AlAs TBS is observed. The Γ and X energy-band profiles under bias have been calculated in order to identify the observed features.

Original language	English
Pages (from-to)	5199-5201
Number of pages	3
Journal	Journal of Applied Physics
Volume	65
Issue number	12
DOIs	https://doi.org/10.1063/1.343151
State	Published - 1989

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@article{a04fcd1b7abd46ccb524a675a75a639c,

title = "The X-valley transport in GaAs/AlAs triple barrier structures",

abstract = "Electron transport through the X valley of GaAs/AlAs triple-barrier structures (TBS) grown by molecular-beam epitaxy has been studied. Negative differential resistance is observed at 77 K in one type of TBS and is identified as the result of electron transport through both the Γ and X valleys of TBS. In another type of TBS, resonant tunneling through the X valley of GaAs/AlAs TBS is observed. The Γ and X energy-band profiles under bias have been calculated in order to identify the observed features.",

author = "Peng Cheng and Park, {Byung Gook} and Kim, {Sam Dong} and Harris, {James S.}",

year = "1989",

doi = "10.1063/1.343151",

language = "English",

volume = "65",

pages = "5199--5201",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - The X-valley transport in GaAs/AlAs triple barrier structures

AU - Cheng, Peng

AU - Park, Byung Gook

AU - Kim, Sam Dong

AU - Harris, James S.

PY - 1989

Y1 - 1989

N2 - Electron transport through the X valley of GaAs/AlAs triple-barrier structures (TBS) grown by molecular-beam epitaxy has been studied. Negative differential resistance is observed at 77 K in one type of TBS and is identified as the result of electron transport through both the Γ and X valleys of TBS. In another type of TBS, resonant tunneling through the X valley of GaAs/AlAs TBS is observed. The Γ and X energy-band profiles under bias have been calculated in order to identify the observed features.

AB - Electron transport through the X valley of GaAs/AlAs triple-barrier structures (TBS) grown by molecular-beam epitaxy has been studied. Negative differential resistance is observed at 77 K in one type of TBS and is identified as the result of electron transport through both the Γ and X valleys of TBS. In another type of TBS, resonant tunneling through the X valley of GaAs/AlAs TBS is observed. The Γ and X energy-band profiles under bias have been calculated in order to identify the observed features.

UR - http://www.scopus.com/inward/record.url?scp=0342825171&partnerID=8YFLogxK

U2 - 10.1063/1.343151

DO - 10.1063/1.343151

M3 - Article

AN - SCOPUS:0342825171

SN - 0021-8979

VL - 65

SP - 5199

EP - 5201

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

The X-valley transport in GaAs/AlAs triple barrier structures

Abstract

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