Abstract
Electron transport through the X valley of GaAs/AlAs triple-barrier structures (TBS) grown by molecular-beam epitaxy has been studied. Negative differential resistance is observed at 77 K in one type of TBS and is identified as the result of electron transport through both the Γ and X valleys of TBS. In another type of TBS, resonant tunneling through the X valley of GaAs/AlAs TBS is observed. The Γ and X energy-band profiles under bias have been calculated in order to identify the observed features.
| Original language | English |
|---|---|
| Pages (from-to) | 5199-5201 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 65 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1989 |