Thermal analysis and operational characteristics of an AlGaN/GaN high electron mobility transistor with copper-filled structures: A simulation study
- Kyu Won Jang
- , In Tae Hwang
- , Hyun Jung Kim
- , Sang Heung Lee
- , Jong Won Lim
- , Hyun Seok Kim
- Dongguk University
- Electronics and Telecommunications Research Institute
Research output: Contribution to journal › Article › peer-review
26
Scopus
citations