Thermal stabilities of metal bottom electrodes for Ta₂O₅ metal-oxide-metal capacitor structure

Thermal stabilities of various metal bottom electrodes were examined by using a Ta₂O₅ metal-oxide-metal (MOM) capacitor structure. After depositing 10-nm thick Ta₂O₅ on metal-electrode/poly-Si, we performed rapid thermal oxidation (RTO) at 850 °C for 60 s in an O₂ ambient. A chemical-vapor-deposition (CVD) WSi₂ electrode showed satisfactory thermal stability after the RTO, while other examined electrode materials exhibited thermal degradation caused by oxidation failure or interfacial reaction between the substrate poly-Si and the Ta₂O₅. After post-annealing at 650 °C for 30 min (in N₂ condition) with CVD TiN top electrode, an effective oxide thickness (T_ox) of ∼32 Å and a leakage current density of ∼10⁷ A/cm² at 1.25 V were obtained from the MOM capacitor with the WSi₂ bottom electrode. Other electrode materials, such as TiN, TiSi_x, WN_x, W, and Ta, were severely oxidized during the RTO in the MOM structures, and very poor capacitor properties were obtained in terms of T_ox and leakage current.