Thin-film transistor behaviour and the associated physical origin of water-annealed In-Ga-Zn oxide semiconductor

Byung Du Ahn; Jun Hyung Lim; Mann Ho Cho; Jin Seong Park; Kwun Bum Chung

doi:10.1088/0022-3727/45/41/415307

Thin-film transistor behaviour and the associated physical origin of water-annealed In-Ga-Zn oxide semiconductor

Byung Du Ahn, Jun Hyung Lim, Mann Ho Cho, Jin Seong Park, Kwun Bum Chung

Department of Physics

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

A transparent In-Ga-Zn oxide semiconductor was thermally annealed in an ambient atmosphere of water vapour and the associated electrical and physical properties of the film were investigated. After annealing in water vapour, the resulting thin-film transistor (TFT) exhibits n-type behaviour with a field effect mobility of 11.4cm ²V ^-1s ^-1, and an on/off current ratio of 6.65×10 ⁹. The annealing process in water vapour induces changes in the elemental composition and chemical bonding states of Zn and O. These phenomena affect the changes of band alignment including the band gap and conduction band offset (Δ(E _CB-E _F)) of InGaZnO semiconductors, which is the basis for the improved operation and performance of these TFTs.

Original language	English
Article number	415307
Journal	Journal Physics D: Applied Physics
Volume	45
Issue number	41
DOIs	https://doi.org/10.1088/0022-3727/45/41/415307
State	Published - 17 Oct 2012

Access to Document

10.1088/0022-3727/45/41/415307

Cite this

@article{51f773a8ea094c02b4f05252f3a8e039,

title = "Thin-film transistor behaviour and the associated physical origin of water-annealed In-Ga-Zn oxide semiconductor",

abstract = "A transparent In-Ga-Zn oxide semiconductor was thermally annealed in an ambient atmosphere of water vapour and the associated electrical and physical properties of the film were investigated. After annealing in water vapour, the resulting thin-film transistor (TFT) exhibits n-type behaviour with a field effect mobility of 11.4cm 2V -1s -1, and an on/off current ratio of 6.65×10 9. The annealing process in water vapour induces changes in the elemental composition and chemical bonding states of Zn and O. These phenomena affect the changes of band alignment including the band gap and conduction band offset (Δ(E CB-E F)) of InGaZnO semiconductors, which is the basis for the improved operation and performance of these TFTs.",

author = "Ahn, {Byung Du} and Lim, {Jun Hyung} and Cho, {Mann Ho} and Park, {Jin Seong} and Chung, {Kwun Bum}",

year = "2012",

month = oct,

day = "17",

doi = "10.1088/0022-3727/45/41/415307",

language = "English",

volume = "45",

journal = "Journal Physics D: Applied Physics",

issn = "0022-3727",

publisher = "Institute of Physics",

number = "41",

}

TY - JOUR

T1 - Thin-film transistor behaviour and the associated physical origin of water-annealed In-Ga-Zn oxide semiconductor

AU - Ahn, Byung Du

AU - Lim, Jun Hyung

AU - Cho, Mann Ho

AU - Park, Jin Seong

AU - Chung, Kwun Bum

PY - 2012/10/17

Y1 - 2012/10/17

N2 - A transparent In-Ga-Zn oxide semiconductor was thermally annealed in an ambient atmosphere of water vapour and the associated electrical and physical properties of the film were investigated. After annealing in water vapour, the resulting thin-film transistor (TFT) exhibits n-type behaviour with a field effect mobility of 11.4cm 2V -1s -1, and an on/off current ratio of 6.65×10 9. The annealing process in water vapour induces changes in the elemental composition and chemical bonding states of Zn and O. These phenomena affect the changes of band alignment including the band gap and conduction band offset (Δ(E CB-E F)) of InGaZnO semiconductors, which is the basis for the improved operation and performance of these TFTs.

AB - A transparent In-Ga-Zn oxide semiconductor was thermally annealed in an ambient atmosphere of water vapour and the associated electrical and physical properties of the film were investigated. After annealing in water vapour, the resulting thin-film transistor (TFT) exhibits n-type behaviour with a field effect mobility of 11.4cm 2V -1s -1, and an on/off current ratio of 6.65×10 9. The annealing process in water vapour induces changes in the elemental composition and chemical bonding states of Zn and O. These phenomena affect the changes of band alignment including the band gap and conduction band offset (Δ(E CB-E F)) of InGaZnO semiconductors, which is the basis for the improved operation and performance of these TFTs.

UR - http://www.scopus.com/inward/record.url?scp=84866904150&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/45/41/415307

DO - 10.1088/0022-3727/45/41/415307

M3 - Article

AN - SCOPUS:84866904150

SN - 0022-3727

VL - 45

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

IS - 41

M1 - 415307

ER -

Thin-film transistor behaviour and the associated physical origin of water-annealed In-Ga-Zn oxide semiconductor

Abstract

Access to Document

Other files and links

Fingerprint

Cite this