Thin film transistors using preferentially grown semiconducting single-walled carbon nanotube networks by water-assisted plasma-enhanced chemical vapor deposition

Un Jeong Kim, Eun Hong Lee, Jong Min Kim, Yo Sep Min, Eunseong Kim, Wanjun Park

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

Nearly perfect semiconducting single-walled carbon nanotube random network thin film transistors were fabricated and their reproducible transport properties were investigated. The networked single-walled carbon nanotubes were directly grown by water-assisted plasma-enhanced chemical vapor deposition. Optical analysis confirmed that the nanotubes were mostly semiconductors without clear metallic resonances in both the Raman and the UV-vis-IR spectroscopy. The transistors made by the nanotube networks whose density was much larger than the percolation threshold also showed no metallic paths. Estimation based on the conductance change of semiconducting nanotubes in the SWNT network due to applied gate voltage difference (conductance difference for onand off state) indicated a preferential growth of semiconducting nanotubes with an advantage of water-assisted PECVD. The nanotube transistors showed 10-5 of on/off ratio and ∼8cm2V-1s-1 of field effect mobility.

Original languageEnglish
Article number295201
JournalNanotechnology
Volume20
Issue number29
DOIs
StatePublished - 2009

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