Abstract
In this study, we examine the possibility of using Ti/Cu bilayer as source/drain electrodes for SiNx -passivated Hf-In-Zn-O (HIZO) thin film transistors by comparing their electrical properties with devices that use Mo electrodes. The Mo devices operate in depletion mode with a higher field effect mobility, while the Ti/Cu devices exhibit an improved subthreshold swing and operate in enhancement mode. Transmission electron microscopy characterization reveals the formation of an amorphous TiOx layer at the Ti/HIZO interface, which is suggested to be responsible for the disparate device characteristics in terms of contact resistance and threshold delay.
Original language | English |
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Article number | 162105 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 16 |
DOIs | |
State | Published - 18 Oct 2010 |