Abstract
Studies of Shubnikov-de Haas (SdII) oscillations corresponding to the spin-Landau levels of a two-dimensional electron gas at 100 mK have been performed on modulation-doped n-type Si/Si1-xGex heterostructures. The method used to obtain the effective Landé g-factor can be described as the method of coincidences, where the tilt angle that causes adjacent Shubnikov-de Haas (SdII) minima to be equal is used to determine the effective g-factor. The effective g-factor for 6⇔8 was 3.34±0.05. The results demonstrated that the effective g-factor oscillated as a function of the filling factor.
Original language | English |
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Pages (from-to) | 223-227 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 36 |
Issue number | 4 |
State | Published - Apr 2000 |