TiN electrode-induced bipolar resistive switching of TiO2 thin films

Young Ho Do; June Sik Kwak; Yoon Cheol Bae; Jong Hyun Lee; Yongmin Kim; Hyunsik Im; Jin Pyo Hong

doi:10.1016/j.cap.2009.12.017

TiN electrode-induced bipolar resistive switching of TiO₂ thin films

Young Ho Do, June Sik Kwak, Yoon Cheol Bae, Jong Hyun Lee, Yongmin Kim, Hyunsik Im, Jin Pyo Hong

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

The bipolar resistive switching characteristics in polycrystalline TiO₂ thin films after regular forming process were studied using two different top or bottom TiN electrodes (Sample A: top TiN/TiO₂/Pt, Sample B: Pt/TiO₂/TiN bottom). The sample A and B clearly showed two different switching directions of counter-clockwise (CCW) and clockwise (CW) bipolar switching behaviors, respectively, depending on the relative position of the TiN electrode. These switching characteristics in both samples could be understood by considering the forming and rupture of the conducting path due to the migration of oxygen ions between the TiO₂ layer and the TiN electrode, which acts like the oxygen reservoir. In addition, both samples clearly display high reliable memory switching characteristics, such as stable switching speed (μs), endurance behaviors (>10⁴), and long retention times (>10⁴ s).

Original language	English
Pages (from-to)	e71-e74
Journal	Current Applied Physics
Volume	10
Issue number	1 SUPPL. 1
DOIs	https://doi.org/10.1016/j.cap.2009.12.017
State	Published - Jan 2010

Keywords

Nonvolatile memory
ReRAM
Resistive switching

Access to Document

10.1016/j.cap.2009.12.017

Cite this

@article{c534c58d426f4ab7ae7b81687b99b66a,

title = "TiN electrode-induced bipolar resistive switching of TiO2 thin films",

abstract = "The bipolar resistive switching characteristics in polycrystalline TiO2 thin films after regular forming process were studied using two different top or bottom TiN electrodes (Sample A: top TiN/TiO2/Pt, Sample B: Pt/TiO2/TiN bottom). The sample A and B clearly showed two different switching directions of counter-clockwise (CCW) and clockwise (CW) bipolar switching behaviors, respectively, depending on the relative position of the TiN electrode. These switching characteristics in both samples could be understood by considering the forming and rupture of the conducting path due to the migration of oxygen ions between the TiO2 layer and the TiN electrode, which acts like the oxygen reservoir. In addition, both samples clearly display high reliable memory switching characteristics, such as stable switching speed (μs), endurance behaviors (>104), and long retention times (>104 s).",

keywords = "Nonvolatile memory, ReRAM, Resistive switching",

author = "Do, {Young Ho} and Kwak, {June Sik} and Bae, {Yoon Cheol} and Lee, {Jong Hyun} and Yongmin Kim and Hyunsik Im and Hong, {Jin Pyo}",

year = "2010",

month = jan,

doi = "10.1016/j.cap.2009.12.017",

language = "English",

volume = "10",

pages = "e71--e74",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "1 SUPPL. 1",

}

TY - JOUR

T1 - TiN electrode-induced bipolar resistive switching of TiO2 thin films

AU - Do, Young Ho

AU - Kwak, June Sik

AU - Bae, Yoon Cheol

AU - Lee, Jong Hyun

AU - Kim, Yongmin

AU - Im, Hyunsik

AU - Hong, Jin Pyo

PY - 2010/1

Y1 - 2010/1

N2 - The bipolar resistive switching characteristics in polycrystalline TiO2 thin films after regular forming process were studied using two different top or bottom TiN electrodes (Sample A: top TiN/TiO2/Pt, Sample B: Pt/TiO2/TiN bottom). The sample A and B clearly showed two different switching directions of counter-clockwise (CCW) and clockwise (CW) bipolar switching behaviors, respectively, depending on the relative position of the TiN electrode. These switching characteristics in both samples could be understood by considering the forming and rupture of the conducting path due to the migration of oxygen ions between the TiO2 layer and the TiN electrode, which acts like the oxygen reservoir. In addition, both samples clearly display high reliable memory switching characteristics, such as stable switching speed (μs), endurance behaviors (>104), and long retention times (>104 s).

AB - The bipolar resistive switching characteristics in polycrystalline TiO2 thin films after regular forming process were studied using two different top or bottom TiN electrodes (Sample A: top TiN/TiO2/Pt, Sample B: Pt/TiO2/TiN bottom). The sample A and B clearly showed two different switching directions of counter-clockwise (CCW) and clockwise (CW) bipolar switching behaviors, respectively, depending on the relative position of the TiN electrode. These switching characteristics in both samples could be understood by considering the forming and rupture of the conducting path due to the migration of oxygen ions between the TiO2 layer and the TiN electrode, which acts like the oxygen reservoir. In addition, both samples clearly display high reliable memory switching characteristics, such as stable switching speed (μs), endurance behaviors (>104), and long retention times (>104 s).

KW - Nonvolatile memory

KW - ReRAM

KW - Resistive switching

UR - http://www.scopus.com/inward/record.url?scp=77649234132&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2009.12.017

DO - 10.1016/j.cap.2009.12.017

M3 - Article

AN - SCOPUS:77649234132

SN - 1567-1739

VL - 10

SP - e71-e74

JO - Current Applied Physics

JF - Current Applied Physics

IS - 1 SUPPL. 1

ER -

TiN electrode-induced bipolar resistive switching of TiO₂ thin films

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this