Ti/Ni ohmic contact formation to InAs Nanowire

Min Hyeok Jo, Jae Cheol Shin

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The nanowire geometry leads to very high contact resistivity between the semiconductor and metal electrode. In this study, the contact resistance between InAs nanowires and various metal electrodes was measured using the transmission-linemodeling (TLM) method. The InAs nanowires were grown via a catalyst-free growth method, which resulted in a very uniform diameter along the nanowire length. A Ti/Ni electrode provided ohmic contact with the InAs nanowire with a very low electrical resistivity of 11.4 ωcm2. The InAs nanowire-based field-effect transistor showed a very high electron mobility of 1153 cm2 V-1S-1 at room temperature. These results suggest that Ti/Ni is an ideal substitute for the commonly used Ti/Au electrode to InAs nanowires.

Original languageEnglish
Pages (from-to)3333-3336
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number5
DOIs
StatePublished - 2017

Keywords

  • Field-Effect Transistor
  • InAs
  • MOCVD
  • Nanowire
  • Transmission-Line Modeling

Fingerprint

Dive into the research topics of 'Ti/Ni ohmic contact formation to InAs Nanowire'. Together they form a unique fingerprint.

Cite this