Abstract
The nanowire geometry leads to very high contact resistivity between the semiconductor and metal electrode. In this study, the contact resistance between InAs nanowires and various metal electrodes was measured using the transmission-linemodeling (TLM) method. The InAs nanowires were grown via a catalyst-free growth method, which resulted in a very uniform diameter along the nanowire length. A Ti/Ni electrode provided ohmic contact with the InAs nanowire with a very low electrical resistivity of 11.4 ωcm2. The InAs nanowire-based field-effect transistor showed a very high electron mobility of 1153 cm2 V-1S-1 at room temperature. These results suggest that Ti/Ni is an ideal substitute for the commonly used Ti/Au electrode to InAs nanowires.
Original language | English |
---|---|
Pages (from-to) | 3333-3336 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 17 |
Issue number | 5 |
DOIs | |
State | Published - 2017 |
Keywords
- Field-Effect Transistor
- InAs
- MOCVD
- Nanowire
- Transmission-Line Modeling