TY - JOUR
T1 - Toward More Realistic Synaptic Mimicry in Non-Volatile RRAM Devices
T2 - A Novel Experimental Approach Focused on Synaptic Forgetting
AU - Ko, Minsu
AU - Byun, Yongjin
AU - Kim, Sungjun
N1 - Publisher Copyright:
© 2025 Wiley-VCH GmbH.
PY - 2025
Y1 - 2025
N2 - Synaptic emulation using memristive devices has advanced neuromorphic computing by enabling energy-efficient and scalable architectures. Here, we report a non-volatile TiN/Al/TiN/Ti/TiOx/Al2O3/Pt resistive random-access memory (RRAM) device featuring an oxygen-deficient TiOx switching layer. The device exhibits reliable long-term memory characteristics with stable multi-level current modulation. Neuromorphic functionalities such as pattern learning and classification using the EMNIST dataset, as well as 4-bit edge computing, are successfully demonstrated, with the classification achieving an accuracy of 91.18%. While prior studies predominantly focused on excitatory synaptic behaviors, this work introduces a hardware-level approach to emulate synaptic forgetting, an essential but underexplored aspect of biological memory processing. To implement forgetting, we propose three experimental methodologies: (1) inhibitory postsynaptic current (IPSC) for synaptic suppression, (2) reversed Pavlovian conditioning to emulate de-learning, and (3) activity-dependent synaptic selection (ADSS) mimicking biologically realistic synaptic pruning. These strategies enable selective synaptic weakening based on firing strength and frequency, closely resembling natural forgetting mechanisms. Our findings establish a new paradigm in neuromorphic hardware that balances learning and forgetting using non-volatile devices. This direction not only enhances biological plausibility but also broadens the functional capabilities of memristive systems for adaptive and efficient edge AI applications.
AB - Synaptic emulation using memristive devices has advanced neuromorphic computing by enabling energy-efficient and scalable architectures. Here, we report a non-volatile TiN/Al/TiN/Ti/TiOx/Al2O3/Pt resistive random-access memory (RRAM) device featuring an oxygen-deficient TiOx switching layer. The device exhibits reliable long-term memory characteristics with stable multi-level current modulation. Neuromorphic functionalities such as pattern learning and classification using the EMNIST dataset, as well as 4-bit edge computing, are successfully demonstrated, with the classification achieving an accuracy of 91.18%. While prior studies predominantly focused on excitatory synaptic behaviors, this work introduces a hardware-level approach to emulate synaptic forgetting, an essential but underexplored aspect of biological memory processing. To implement forgetting, we propose three experimental methodologies: (1) inhibitory postsynaptic current (IPSC) for synaptic suppression, (2) reversed Pavlovian conditioning to emulate de-learning, and (3) activity-dependent synaptic selection (ADSS) mimicking biologically realistic synaptic pruning. These strategies enable selective synaptic weakening based on firing strength and frequency, closely resembling natural forgetting mechanisms. Our findings establish a new paradigm in neuromorphic hardware that balances learning and forgetting using non-volatile devices. This direction not only enhances biological plausibility but also broadens the functional capabilities of memristive systems for adaptive and efficient edge AI applications.
KW - activity-dependent synaptic selection
KW - inhibitory postsynaptic current
KW - non-volatile memristor
KW - resistive random-access memory
KW - synaptic forgetting
UR - https://www.scopus.com/pages/publications/105023398480
U2 - 10.1002/admt.202501570
DO - 10.1002/admt.202501570
M3 - Article
AN - SCOPUS:105023398480
SN - 2365-709X
JO - Advanced Materials Technologies
JF - Advanced Materials Technologies
ER -