Abstract
Synaptic emulation using memristive devices has advanced neuromorphic computing by enabling energy-efficient and scalable architectures. Here, we report a non-volatile TiN/Al/TiN/Ti/TiOx/Al2O3/Pt resistive random-access memory (RRAM) device featuring an oxygen-deficient TiOx switching layer. The device exhibits reliable long-term memory characteristics with stable multi-level current modulation. Neuromorphic functionalities such as pattern learning and classification using the EMNIST dataset, as well as 4-bit edge computing, are successfully demonstrated, with the classification achieving an accuracy of 91.18%. While prior studies predominantly focused on excitatory synaptic behaviors, this work introduces a hardware-level approach to emulate synaptic forgetting, an essential but underexplored aspect of biological memory processing. To implement forgetting, we propose three experimental methodologies: (1) inhibitory postsynaptic current (IPSC) for synaptic suppression, (2) reversed Pavlovian conditioning to emulate de-learning, and (3) activity-dependent synaptic selection (ADSS) mimicking biologically realistic synaptic pruning. These strategies enable selective synaptic weakening based on firing strength and frequency, closely resembling natural forgetting mechanisms. Our findings establish a new paradigm in neuromorphic hardware that balances learning and forgetting using non-volatile devices. This direction not only enhances biological plausibility but also broadens the functional capabilities of memristive systems for adaptive and efficient edge AI applications.
| Original language | English |
|---|---|
| Article number | e01570 |
| Journal | Advanced Materials Technologies |
| Volume | 11 |
| Issue number | 5 |
| DOIs | |
| State | Published - 6 Mar 2026 |
Keywords
- activity-dependent synaptic selection
- inhibitory postsynaptic current
- non-volatile memristor
- resistive random-access memory
- synaptic forgetting
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