TY - JOUR
T1 - Transient Resistive Switching for Nonvolatile Memory Based on Water-Soluble Cs4PbBr6 Perovskite Films
AU - Chen, Ruqi
AU - Xu, Jun
AU - Lao, Meimei
AU - Liang, Zhiwei
AU - Chen, Yukai
AU - Zhong, Chujie
AU - Huang, Linjun
AU - Hao, Aize
AU - Ismail, Muhammad
N1 - Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/11/1
Y1 - 2019/11/1
N2 - All-inorganic halide perovskite Cs4PbBr6 thin films are synthesized at low temperature through a facile chemical deposition method. The deposited films are implemented as a dielectric and dissolvable layer with the Au/Cs4PbBr6/PEDOT:PSS/ITO configuration for transient memory electronic devices. The bipolar resistive switching phenomena, good switching cycling (endurance), and long data retention (104 s) are demonstrated on as-grown nonvolatile memory device to evaluate its high stability, reliability, and reproducibility. The I–V relationship shows ohmic conduction behavior at the low-resistance state, whereas space charge limited current mechanism is dominating at the high-resistance state. The conductive filaments formation and rupture, accompanied by Br− vacancies in Cs4PbBr6 layer, are employed to elucidate switching mechanism. More interestingly, the soluble insulation layer of the devices is quickly dissolved and the color of films transforms from yellow to white as fast as 2 s in deionized water, which exhibits good transient performance. Moreover, the electrical characteristics as well as optical properties vanish absolutely to further demonstrate the abovementioned transition after the memory devices dissolve in deionized water. This work offers a novel way to prepare disposable electronic memory devices by utilizing cheap perovskite-based materials for transient electronics memory area as well as implantable electronics systems.
AB - All-inorganic halide perovskite Cs4PbBr6 thin films are synthesized at low temperature through a facile chemical deposition method. The deposited films are implemented as a dielectric and dissolvable layer with the Au/Cs4PbBr6/PEDOT:PSS/ITO configuration for transient memory electronic devices. The bipolar resistive switching phenomena, good switching cycling (endurance), and long data retention (104 s) are demonstrated on as-grown nonvolatile memory device to evaluate its high stability, reliability, and reproducibility. The I–V relationship shows ohmic conduction behavior at the low-resistance state, whereas space charge limited current mechanism is dominating at the high-resistance state. The conductive filaments formation and rupture, accompanied by Br− vacancies in Cs4PbBr6 layer, are employed to elucidate switching mechanism. More interestingly, the soluble insulation layer of the devices is quickly dissolved and the color of films transforms from yellow to white as fast as 2 s in deionized water, which exhibits good transient performance. Moreover, the electrical characteristics as well as optical properties vanish absolutely to further demonstrate the abovementioned transition after the memory devices dissolve in deionized water. This work offers a novel way to prepare disposable electronic memory devices by utilizing cheap perovskite-based materials for transient electronics memory area as well as implantable electronics systems.
KW - conductive filaments
KW - CsPbBr films
KW - resistive switching
KW - transient memory
UR - http://www.scopus.com/inward/record.url?scp=85073925615&partnerID=8YFLogxK
U2 - 10.1002/pssr.201900397
DO - 10.1002/pssr.201900397
M3 - Article
AN - SCOPUS:85073925615
SN - 1862-6254
VL - 13
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 11
M1 - 1900397
ER -