Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiOx/TiOy frameworks due to oxygen vacancy drifts

Yoon Cheol Bae; Ah Rahm Lee; June Sik Kwak; Hyunsik Im; Young Ho Do; Jin Pyo Hong

doi:10.1007/s00339-011-6289-0

Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO_x/TiO_y frameworks due to oxygen vacancy drifts

Yoon Cheol Bae, Ah Rahm Lee, June Sik Kwak, Hyunsik Im, Young Ho Do, Jin Pyo Hong

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Bilayer TiO_x (oxygen rich, region 1)/TiO_y (oxygen poor, region 2) homojunctions were evaluated as resistive switching elements where the TiO_x layers were designed with various oxygen contents. Depending on the oxygen ion content, controllable memory windows were observed by changing the off-state (high-resistance state), while the on-state (low resistance) was left with very little change. The cause of the variable memory windows in resistive switching phenomena appears to be the increasing amounts of movable oxygen ions between the TiO_x and TiO_y layers. In addition, the X-ray photoelectron spectroscopy measurements of the initial, low resistance, and high-resistance states in the homojunctions demonstrated the possible change of metallic and insulating Ti sub-oxide phases at the interfaces and oxygen ion rich region due to the migration of oxygen ions.

Original language	English
Pages (from-to)	1009-1013
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	102
Issue number	4
DOIs	https://doi.org/10.1007/s00339-011-6289-0
State	Published - Mar 2011

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title = "Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiOx/TiOy frameworks due to oxygen vacancy drifts",

abstract = "Bilayer TiOx (oxygen rich, region 1)/TiOy (oxygen poor, region 2) homojunctions were evaluated as resistive switching elements where the TiOx layers were designed with various oxygen contents. Depending on the oxygen ion content, controllable memory windows were observed by changing the off-state (high-resistance state), while the on-state (low resistance) was left with very little change. The cause of the variable memory windows in resistive switching phenomena appears to be the increasing amounts of movable oxygen ions between the TiOx and TiOy layers. In addition, the X-ray photoelectron spectroscopy measurements of the initial, low resistance, and high-resistance states in the homojunctions demonstrated the possible change of metallic and insulating Ti sub-oxide phases at the interfaces and oxygen ion rich region due to the migration of oxygen ions.",

author = "Bae, {Yoon Cheol} and Lee, {Ah Rahm} and Kwak, {June Sik} and Hyunsik Im and Do, {Young Ho} and Hong, {Jin Pyo}",

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T1 - Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiOx/TiOy frameworks due to oxygen vacancy drifts

AU - Bae, Yoon Cheol

AU - Lee, Ah Rahm

AU - Kwak, June Sik

AU - Im, Hyunsik

AU - Do, Young Ho

AU - Hong, Jin Pyo

PY - 2011/3

Y1 - 2011/3

N2 - Bilayer TiOx (oxygen rich, region 1)/TiOy (oxygen poor, region 2) homojunctions were evaluated as resistive switching elements where the TiOx layers were designed with various oxygen contents. Depending on the oxygen ion content, controllable memory windows were observed by changing the off-state (high-resistance state), while the on-state (low resistance) was left with very little change. The cause of the variable memory windows in resistive switching phenomena appears to be the increasing amounts of movable oxygen ions between the TiOx and TiOy layers. In addition, the X-ray photoelectron spectroscopy measurements of the initial, low resistance, and high-resistance states in the homojunctions demonstrated the possible change of metallic and insulating Ti sub-oxide phases at the interfaces and oxygen ion rich region due to the migration of oxygen ions.

AB - Bilayer TiOx (oxygen rich, region 1)/TiOy (oxygen poor, region 2) homojunctions were evaluated as resistive switching elements where the TiOx layers were designed with various oxygen contents. Depending on the oxygen ion content, controllable memory windows were observed by changing the off-state (high-resistance state), while the on-state (low resistance) was left with very little change. The cause of the variable memory windows in resistive switching phenomena appears to be the increasing amounts of movable oxygen ions between the TiOx and TiOy layers. In addition, the X-ray photoelectron spectroscopy measurements of the initial, low resistance, and high-resistance states in the homojunctions demonstrated the possible change of metallic and insulating Ti sub-oxide phases at the interfaces and oxygen ion rich region due to the migration of oxygen ions.

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Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO_x/TiO_y frameworks due to oxygen vacancy drifts

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